Structure of a semiconductor chip having a conductive layer
    1.
    发明授权
    Structure of a semiconductor chip having a conductive layer 失效
    具有导电层的半导体芯片的结构

    公开(公告)号:US5288948A

    公开(公告)日:1994-02-22

    申请号:US778881

    申请日:1991-12-26

    IPC分类号: H01L23/528 H05K1/00

    CPC分类号: H01L23/5286 H01L2924/0002

    摘要: In order to prevent the occurrence of corrosion due to the sliding of a relatively wide aluminum conductive layer (12) such as a power source conductive layer or a ground conductive layer, formed on a semiconductor substrate (11), breakage of a lower conductive layer due to the sliding of an upper aluminum conductive layer (12) in case of a multilayer interconnection, and the creation of voids in the lower aluminum conductive layer due to the moisture beneath the relatively wide metal conductive layer in case of a multi layer interconnection etc., the conductive layer structure is constructed so that the conductive layer (12) relatively great in width is divided into several conductive layer portions and so that the width of each of the divided conductive layer portions is in a range of 10 .mu.m to 40 .mu.m.

    摘要翻译: PCT No.PCT / JP90 / 00424 Sec。 371 1991年12月26日第 102(e)日期1991年12月26日PCT 1990年3月29日PCT PCT。 出版物WO91 / 0061600 日期为1991年1月10日。为了防止由形成在半导体基板(11)上的诸如电源导体层或接地导电层的相对宽的铝导电层(12)滑动引起的腐蚀, 在多层互连的情况下由于上部铝导电层(12)的滑动导致的下部导电层的破损,以及由于相对较宽的金属导电层下面的水分导致的下部铝导电层中的空隙的产生 多层互连的情况等,导电层结构被构造为使得宽度相对较大的导电层(12)被分成几个导电层部分,并且使得每个分离的导电层部分的宽度为 范围10(我)m到40(我)m。