Abstract:
The present application provides a method for producing organic acid, such as acetic acid, propionic acid, butyric acid, or another high-quality raw material designed for methane fermentation and obtained by converting waste paper and other forms of cellulose-based biomass to organic acid, wherein said method comprising a step for reacting rumen fluid collected from a ruminant animal with cellulose-containing waste matter. This method provides the effective use of cellulose-containing waste matter, which is a high-quality fermentation resource.
Abstract:
[Problem]To provide a feed for fish farming which is excellent in terms of stability of feed supply and feed shelf life and which has excellent feed intake and feed efficiency.[Solution]A feed for fish farming consisting of an outer layer and an inner layer, characterized in that a composition constituting the outer layer has a breaking stress of 5×104 to 1×106 N/m2, a cohesiveness (30%) of 0.4 to 1.0, and a breaking strain of 30 to 80%. A feed for fish farming characterized by consisting of an outer layer constructed from a heat-induced gel which comprises a protein and/or a starch, and an inner layer comprising a composition which contains nutrient ingredients having fish meal and an oil as essential ingredients. As the protein, surimi, ground fish meat, krill, gelatin, collagen, gluten, egg albumen and soy bean protein are preferred. As the starch, tapioca starch, wheat starch, potato starch, corn starch, bean starch, waxy corn starch and processed products of these starches are preferred.
Abstract translation:[问题]提供饲料供应稳定性和饲料保质期优异的鱼饲料,并且具有优异的进料量和进料效率。 [解决方案]一种由外层和内层构成的鱼饲料,其特征在于,构成外层的组合物的断裂应力为5×10 4〜1×10 6 N / m 2,内聚力(30%)为 0.4〜1.0,断裂应变为30〜80%。 一种用于鱼类养殖的饲料,其特征在于由包含蛋白质和/或淀粉的热诱导凝胶构成的外层,以及包含含有具有鱼粉和油作为必需成分的营养成分的组合物的内层。 作为蛋白质,优选鱼糜,地面鱼肉,磷虾,明胶,胶原蛋白,麸质,蛋清蛋白和大豆蛋白。 作为淀粉,木薯淀粉,小麦淀粉,马铃薯淀粉,玉米淀粉,豆淀粉,蜡质玉米淀粉和这些淀粉的加工产物是优选的。
Abstract:
A semiconductor device has a fuse, an internal circuit and a protection capacitor. The fuse has a first terminal connected to be applied to a fixed voltage and a second terminal. The internal circuit includes a transistor. The transistor has a threshold voltage and a gate. The protection capacitor is connected between the second terminal of the fuse and the gate of the transistor. The protection capacitor supplies the threshold voltage to the transistor where the fuse supplies the fixed voltage to the protection capacitor.
Abstract:
Sheet-like audio information recording/reproducing means capable of recording/reproducing audio information is sandwiched between two support sheets from front and back only in part of the area thereof and these two support sheets are further sandwiched between two surface sheets and the support sheets and surface sheets are bonded together.
Abstract:
An electro-static discharge protection circuit and a semiconductor device having the same is disclosed. The electro-static discharge protection circuit has a current control circuit. The current control circuit has a first capacitive element. When the external source voltage is applied to the external source voltage supply line, the booster circuit in the internal circuitry boosts the internal source voltage of the internal source voltage supply line. The external source voltage becomes transiently greater than the internal source voltage at the early stage of the boosting step when the booster circuit boosts the internal source voltage based on the external source voltage. The first capacitive element restricts a current from flowing from the second terminal of the thyristor rectifier circuit to the internal source voltage, even when the external source voltage becomes transiently greater than the internal source voltage at the early stage of the boosting step when the booster circuit boosts the internal source voltage based on the external source voltage. This prevents the thyristor rectifier circuit from malfunctioning and turning on.
Abstract:
A semiconductor device having a semiconductor substrate, an insulating layer, a fuse, a diffusion layer and a resistor. The semiconductor substrate has a first conductivity type. The insulating layer is selectively formed on the surface of the semiconductor substrate. The fuse is formed on the insulating layer. The diffusion layer has a second conductivity type. The diffusion layer is formed on the surface of the semiconductor substrate and electrically connected to the fuse. The first resistor is electrically connected to the fuse.
Abstract:
Disclosed is a HOUT position control circuit used to control the horizontal position of display image in a multisync monitor. The circuit has: a first PLL circuit that is phase-locked with input horizontal synchronous signal; a second PLL circuit that is phase-locked with output of the first PLL circuit; and a circuit for generating a delay between outputs of the first PLL circuit and the second PLL circuit to control the delay amount from the input horizontal synchronous signal to output horizontal drive signal.
Abstract:
The present invention offers a tracheal smooth muscle relaxant containing the compound represented by the following formula (1) or pharmacologically acceptable salt thereof as an effective ingredient.
Abstract:
When a semiconductor integrated device is in an inactive state without being supplied with electric power, depletion type NMOS transistors act as resistors whereby a signal line connected to an input pad is electrically connected to the sources of input transistors via the NMOS transistors. In this situation, if an electrostatic surge is applied to the input pad, the surge is released to a voltage supply line. This ensures that the semiconductor integrated device is prevented from being damaged by the electrostatic surge. When electric power is supplied to the semiconductor integrated device and it becomes active, the NMOS transistors come to behave as insulating elements and thus these NMOS transistors have no adverse effects on the normal operation of the semiconductor integrated device.
Abstract:
The present invention relates to a semiconductor device which utilizes a first conduction MOS output transistor 11 as an output transistor. The inventive semiconductor device have a advantage that the occupied area of an electrostatic breakdown preventing circuit is smaller than that of the conventional device, and the resistance against the electrostatic breakdown is better than that of the conventional device, and further an additional manufacturing process is not required, thereby obtaining the semiconductor device with an improved resistance. The inventive device is formed that a second conduction MOS transistor 13 functions as an electrostatic breakdown preventing circuit, with a drain of which being connected to an output terminal 15, and connected in a parallel form with the output transistor.