公开(公告)号：US08477818B2

公开(公告)日：2013-07-02

申请号：US13431043

申请日：2012-03-27

申请人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2304/04

摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.

摘要翻译： 具有降低的阈值电流的氮化镓基半导体激光器件。 氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚 层。

公开(公告)号：US20130003769A1

公开(公告)日：2013-01-03

申请号：US13431043

申请日：2012-03-27

申请人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/34 ,  H01L21/18

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2304/04

摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.

摘要翻译： 具有降低的阈值电流的氮化镓基半导体激光器件。 氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚 第23层。