公开(公告)号：US5284792A

公开(公告)日：1994-02-08

申请号：US74530

申请日：1993-06-11

申请人： Theodor Forster ,  Christoph Harder ,  Albertus Oosenbrug ,  Gary W. Rubloff

发明人： Theodor Forster ,  Christoph Harder ,  Albertus Oosenbrug ,  Gary W. Rubloff

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01L21/20

CPC分类号： H01S5/0201 ,  H01S5/0202 ,  Y10S148/028

摘要： A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the position of the facets to be cleaved by scribing marks into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (l.sub.c) defining the length of the laser cavities and the distance (l.sub.b) between the facets of neighboring laser diodes; and covering the uppermost portion with an etch mask pattern which provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; and etching trenches into an upper portion of the structure defined by the etch windows; and partly underetching the upper portion during a second etch step such that the laser facets can be defined by cleaving the upper portion along the scribed marks without cleaving the whole laser structure; and ultrasonically or mechanically cleaving the upper portions being underetched along the scribed marks; and separating the laser diodes by cleaving them between neighboring lasers.

摘要翻译： 具有切割面的激光二极管的全晶片处理方法，其结合了全晶片处理的优点，至今已知从具有蚀刻面的加工激光器以及切割面的优点。 步骤是：通过将标记划分成包括外延生长层的激光器结构的顶表面来界定要切割的刻面的位置，这些划线标记垂直于待制造的激光器的光轴，划线标记是平行的 ，它们的距离（lc）限定激光腔的长度和相邻激光二极管的面之间的距离（lb）; 并用蚀刻掩模图案覆盖最上部分，该蚀刻掩模图案在限定相邻激光器的小面的位置的划线标记之间提供蚀刻窗口; 并将沟槽蚀刻成由蚀刻窗口限定的结构的上部; 并且在第二蚀刻步骤期间部分地去除所述上部，使得所述激光刻面可以通过沿着所述划刻标记断开所述上部而不使所述整个激光结构断裂来限定; 并且超声或机械地切割沿所述划线标记未被去除的上部; 并通过在相邻激光器之间切割激光二极管来分离激光二极管。