公开(公告)号：US4828648A

公开(公告)日：1989-05-09

申请号：US157557

申请日：1988-02-19

Applicant: Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

Inventor： Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

IPC: C30B19/04 ,  C30B19/06

CPC classification number: C30B19/061 ,  C30B19/04 ,  C30B29/48

Abstract: An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprising channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that lead from the interior of the invention to the external environment. The in situ doping/quench annealing apparatus is accomplished via a stabilized chamber ball valve which operates independently with respect to the gaseous purge ball valve, thereby allowing in situ doping leveling without effecting the atmospheric integrity of the vessel.

Abstract translation: 一种用于在HgCdTe的液相外延生长中进行液相外延，汞封存，基板流平，原位退火/掺杂和气体冲洗的装置和方法。 该装置是一种自包含单元，包括透明盖，用于提供对装置内部的通路，并在装置和盖之间形成气体不可渗透的密封。 该装置还包含调平装置，气体冲洗装置和用于HgCdTe外延膜的原位掺杂/淬火退火的装置。 调平装置包括在其中行进的通道和调平球，当装置处于水平位置时，它们在划痕之间对齐。 气体冲洗装置由气体吹扫球阀组成，该气体吹扫球阀将从本发明的内部引导到外部环境的冲洗通道打开并密封。 原位掺杂/淬火退火装置通过稳定的室球阀实现，该稳定室球阀相对于气体吹扫球阀独立地操作，从而允许原位掺杂流平而不影响容器的大气完整性。

公开(公告)号：US4755364A

公开(公告)日：1988-07-05

申请号：US867974

申请日：1986-05-29

Applicant: Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

Inventor： Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/208

CPC classification number: C30B19/061 ,  C30B19/04 ,  C30B29/48

Abstract: An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprises channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that leads from the interior of the invention to the external environment. The in situ doping/quench annealing apparatus is accomplished via a stabilization chamber ball valve which operates independently with respect to the gaseous purge ball valve, thereby allowing in situ doping leveling without effecting the atmospheric integrity of the vessel.

Abstract translation: 一种用于在HgCdTe的液相外延生长中进行液相外延，汞封存，基板流平，原位退火/掺杂和气体冲洗的装置和方法。 该装置是一种自包含单元，包括透明盖，用于提供对装置内部的通路，并在装置和盖之间形成气体不可渗透的密封。 该装置还包含调平装置，气体冲洗装置和用于HgCdTe外延膜的原位掺杂/淬火退火的装置。 调平装置包括在其中行进的通道和调平球，当装置处于水平位置时，它们在划线之间对齐。 气体冲洗装置包括一个气体吹扫球阀，其打开并密封从本发明的内部引导到外部环境的冲洗通道。 原位掺杂/淬火退火装置通过稳定室球阀来完成，稳定室球阀相对于气体吹扫球阀独立运行，从而允许原位掺杂流平而不影响容器的大气完整性。

公开(公告)号：US5366934A

公开(公告)日：1994-11-22

申请号：US310034

申请日：1989-02-10

Applicant: Theodore J. La Chapelle, Jr.

Inventor： Theodore J. La Chapelle, Jr.

IPC: H01L21/465 ,  H01L21/471 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01L21/465 ,  H01L21/471 ,  Y10S438/958

Abstract: A purely chemical method for forming a layer of insoluble sulfides on semiconductor surfaces in order to passivate their surfaces and more particularly to a method of forming a layer of insoluble sulfides on a HgCdTe device surface.

Abstract translation: 用于在半导体表面上形成不溶性硫化物层以使其表面钝化的纯化学方法，更具体地涉及在HgCdTe器件表面上形成不溶性硫化物层的方法。