公开(公告)号：US07422968B2

公开(公告)日：2008-09-09

申请号：US10901756

申请日：2004-07-29

Applicant: Jiong-Ping Lu ,  Clint Montgomery ,  Lindsey Hall ,  Donald Miles ,  Duofeng Yue ,  Thomas D. Bonifiield

Inventor： Jiong-Ping Lu ,  Clint Montgomery ,  Lindsey Hall ,  Donald Miles ,  Duofeng Yue ,  Thomas D. Bonifiield

IPC: H01L21/425

CPC classification number: H01L21/823835 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02068 ,  H01L27/0629 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device (100) , among other steps, includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes subjecting the gate structure (120) and substrate (110) to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains (320) subsequent to subjecting the gate structure (120) and substrate (110) to the dry etch process. Thereafter, the method includes forming metal silicide regions (510, 520) in the gate structure (120) and the fluorinated source/drains (320).

Abstract translation: 本发明提供一种半导体器件的制造方法以及包括该半导体器件的集成电路的制造方法。 除了其他步骤之外，用于制造半导体器件（100）的方法包括在衬底（110）上形成栅极结构（120）并且在栅极结构（120）附近的衬底（110）中形成源极/漏极区域（190） ）。 该方法还包括对栅极结构（120）和衬底（110）进行干蚀刻工艺，并且在将栅极结构（120）和衬底（120）经受栅极结构（120）和衬底 （110）到干蚀刻工艺。 此后，该方法包括在栅极结构（120）和氟化源极/漏极（320）中形成金属硅化物区域（510,520）。