公开(公告)号：US06203608B1

公开(公告)日：2001-03-20

申请号：US09061362

申请日：1998-04-15

申请人： Shan Sun ,  Thomas Domokos Hadnagy ,  Tom E. Davenport ,  Hiroto Uchida ,  Tsutomu Atsuki ,  Gakuji Uozumi ,  Kensuke Kegeyama ,  Katsumi Ogi

发明人： Shan Sun ,  Thomas Domokos Hadnagy ,  Tom E. Davenport ,  Hiroto Uchida ,  Tsutomu Atsuki ,  Gakuji Uozumi ,  Kensuke Kegeyama ,  Katsumi Ogi

IPC分类号： C09K300

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254

摘要： The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pbv Caw SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0

摘要翻译： 铁电薄膜由PZT，微细晶粒和细薄膜质量，均匀的电气性能和低泄漏性等方面通过溶胶 - 凝胶加工形成的具有大量极化，显着提高的保留和印记特性的液体组合物形成 电流，适用于非易失性存储器。 本发明的铁电薄膜包含由通式（Pbv Caw SrX LaY）（ZrZ Ti1-Z）O3表示的金属氧化物，其中0.9 <= V <= 1.3,0 <= W <= 0.1,0 由构成所述金属氧化物的各种金属的可分解有机金属化合物的溶液形成<= X <= 0.1,0