公开(公告)号：US6141183A

公开(公告)日：2000-10-31

申请号：US115147

申请日：1998-07-14

申请人： Andrew L. Wu ,  Paul Duval ,  Thomas Ferraguto

发明人： Andrew L. Wu ,  Paul Duval ,  Thomas Ferraguto

IPC分类号： G11B5/23 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/232 ,  Y10T29/49046

摘要： A pole-trimmed writer for an MR read/write data transducer which may be produced without significant re-deposition of Al.sub.2 O.sub.3 or NiFe on the sides of the writer poles. The process disclosed herein advantageously provides an upper (top) pole which is processed to project a pair of relatively thin, laterally extending lower flanges, prior to the use of the upper pole as a mask to subsequent ion milling of the lower pole, or shared shield. In a preferred embodiment, the process for producing the flange is implemented in conjunction with the deposition of a single copper (Cu) or dual Al.sub.2 O.sub.3 and chromium (Cr) overlayers formed on the upper pole seed layer followed by the top pole formation and selective removal of a predetermined amount of the underlying portions of the gap material prior to a subsequent ion milling operation and further processing of the read/write head.

摘要翻译： 用于MR读/写数据传感器的极修整写入器，其可以在写器极的侧面上不显着再沉积Al 2 O 3或NiFe的情况下产生。 本文公开的方法有利地提供了上（上）杆，其被加工成在使用上极作为掩模之前投影一对相对薄的横向延伸的下凸缘，以后续离子铣削下极，或共享 屏蔽。 在一个优选实施例中，用于制造凸缘的方法结合沉积形成在上极种子层上的单个铜（Cu）或双重Al 2 O 3和铬（Cr）覆盖层，然后进行顶极形成和选择性去除 在随后的离子铣削操作和读/写头的进一步处理之前，预定量的间隙材料的下面部分。

公开(公告)号：US5804085A

公开(公告)日：1998-09-08

申请号：US791401

申请日：1997-01-30

申请人： Andrew L. Wu ,  Paul Duval ,  Thomas Ferraguto

发明人： Andrew L. Wu ,  Paul Duval ,  Thomas Ferraguto

IPC分类号： G11B5/23 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/232 ,  Y10T29/49046

摘要： A pole-trimmed writer for an MR read/write data transducer which may be produced without significant re-deposition of Al.sub.2 O.sub.3 or NiFe on the sides of the writer poles. The process disclosed herein advantageously provides an upper (top) pole which is processed to project a pair of relatively thin, laterally extending lower flanges, prior to the use of the upper pole as a mask to subsequent ion milling of the lower pole, or shared shield. In a preferred embodiment, the process for producing the flange is implemented in conjunction with the deposition of a single copper (Cu) or dual Al.sub.2 O.sub.3 and chromium (Cr) overlayers formed on the upper pole seed layer followed by the top pole formation and selective removal of a predetermined amount of the underlying portions of the gap material prior to a subsequent ion milling operation and further processing of the read/write head.