公开(公告)号：US06306771B1

公开(公告)日：2001-10-23

申请号：US09384752

申请日：1999-08-27

申请人： Tsengyou Syau ,  James R. Shih ,  Shih-Ked Lee ,  Timothy P. Kay

发明人： Tsengyou Syau ,  James R. Shih ,  Shih-Ked Lee ,  Timothy P. Kay

IPC分类号： H01L21302

CPC分类号： H01L21/32139 ,  H01L21/32136

摘要： The prevention of the formation of undesired defects formed during the etching of etched metal interconnect lines on an integrated circuit during an integrated circuit manufacturing process that involves laying down on a semiconductor wafer a thin film such as an anti-reflective coating (ARC) on a layer of metal to be patterned into the metal interconnects of the individual integrated circuits. To do this the anti-reflective coating layer is covered with an oxide layer prior to applying and patterning subsequent photoresist. The specific metalization layer disclosed can be of aluminum, copper or copper-aluminum alloy. The ARC as disclosed is a nitride layer, such as titanium nitride. The oxide may be formed on the ARC in a number of known ways and may be etched subsequently alone or in combination with the underlying ARC and metal after subsequent photoresist deposit upon the oxide layer.

摘要翻译： 在集成电路制造过程中防止在集成电路制造过程中在蚀刻金属互连线上的蚀刻金属互连线时形成的不希望的缺陷的形成，其包括在半导体晶片上放置诸如抗反射涂层（ARC）的薄膜 金属层将被图案化成各个集成电路的金属互连。 为了做到这一点，在施加和图形化随后的光致抗蚀剂之前，抗氧化层被氧化物层覆盖。 所公开的具体金属化层可以是铝，铜或铜 - 铝合金。 所公开的ARC是氮化物层，例如氮化钛。 氧化物可以以多种已知方式形成在ARC上，并且随后光致抗蚀剂沉积在氧化物层上之后可以单独蚀刻或与下面的ARC和金属组合进行蚀刻。