公开(公告)号：US11041140B2

公开(公告)日：2021-06-22

申请号：US14366098

申请日：2011-10-12

申请人： Gregory S. Pankratz ,  Tom Nilsson ,  John M. Staton

发明人： Gregory S. Pankratz ,  Tom Nilsson ,  John M. Staton

IPC分类号： C12M1/12 ,  C12M3/00 ,  C12M1/00

摘要： A cell culture device (10) of the cultivation of cells. The cell culture device (10) includes a plurality of trays (12a, 12b, 12c, 12d), each tray (12a, 12b, 12c, 12d) having a cell growth surface (20) and at least one wall (22, 24) extending upwardly from the cell growth surface (20). The at least one wall (22, 24) is configured to receive an additional tray thereon. A ratio of the number of the plurality of trays (12a, 12b, 12c, 12d) per a height dimension of the plurality of trays (12a, 12b, 12c, 12d) is greater than or equal to about 1 tray per 12 mm.

公开(公告)号：US20160115434A1

公开(公告)日：2016-04-28

申请号：US14366098

申请日：2011-10-12

申请人： Gregory S. Pankratz ,  Tom Nilsson ,  John M. Staton

发明人： Gregory S. Pankratz ,  Tom Nilsson ,  John M. Staton

IPC分类号： C12M1/12 ,  C12M1/00 ,  C12M3/00

CPC分类号： C12M23/04 ,  C12M21/08 ,  C12M23/44 ,  C12M23/58 ,  C12M37/04

摘要： A cell culture device (10) of the cultivation of cells. The cell culture device (10) includes a plurality of trays (12a, 12b, 12c, 12d), each tray (12a, 12b, 12c, 12d) having a cell growth surface (20) and at least one wall (22, 24) extending upwardly from the cell growth surface (20). The at least one wall (22, 24) is configured to receive an additional tray thereon. A ratio of the number of the plurality of trays (12a, 12b, 12c, 12d) per a height dimension of the plurality of trays (12a, 12b, 12c, 12d) is greater than or equal to about 1 tray per 12 mm.

摘要翻译： 细胞培养装置（10）。 细胞培养装置（10）包括多个托盘（12a，12b，12c，12d），每个托盘（12a，12b，12c，12d）具有细胞生长表面（20）和至少一个壁（22,24 ）从细胞生长表面（20）向上延伸。 所述至少一个壁（22,24）构造成在其上容纳附加的托盘。 多个托盘（12a，12b，12c，12d）每高度尺寸的多个托盘（12a，12b，12c，12d）的数量的比例大于或等于每12mm的大约1个托盘。

公开(公告)号：US5057164A

公开(公告)日：1991-10-15

申请号：US543434

申请日：1990-06-26

申请人： Tom Nilsson ,  Yannick Rancon ,  Eric Duchateau

发明人： Tom Nilsson ,  Yannick Rancon ,  Eric Duchateau

IPC分类号： C21D1/76 ,  C21D9/56

CPC分类号： C21D9/561 ,  C21D1/76

摘要： Process for thermal treatment of metals by passage of metallic pieces into an elongated zone under a controlled atmosphere, having an upstream section at an elevated temperature, where the controlled atmosphere comprises nitrogen and reductive chemicals, particularly hydrogen, possibly carbon monoxide; and a downstream section at a lower temperature under a controlled atmosphere. The invention is characterized by the fact that in the upstream section at an elevated temperature, the atmosphere comprises nitrogen having a residual content of oxygen between 0.5% and 5% produced by separation of air using permeation or adsorption techniques. The reductive chemicals are present at all times in a content at least sufficient to eliminate the oxygen admitted with the nitrogen. The controlled atmosphere in the section downstream from the elongated thermal treatment zone is formed by admission of a gaseous flow taken from the upstream section at an elevated temperature and transferred directly into the downstream section at a lower temperature.

摘要翻译： 在受控气氛下通过金属片进入细长区域的金属热处理方法，其具有在升高的温度下的上游部分，其中受控气氛包含氮气和还原性化学物质，特别是氢气，可能是一氧化碳; 和在受控气氛下的较低温度下游部分。 本发明的特征在于，在升高的温度的上游部分中，气氛包含通过使用渗透或吸附技术分离空气而产生的残余氧含量在0.5％至5％之间的氮气。 所有的还原性化学品总是以至少足以消除氮气所允许的氧气的含量存在。 在细长热处理区下游的部分中的受控气氛是通过承受来自上游部分的高温气流而在较低的温度下直接转移到下游部分中形成的。