公开(公告)号：US06428690B1

公开(公告)日：2002-08-06

申请号：US09661013

申请日：2000-09-13

申请人： Tom Tse

发明人： Tom Tse

IPC分类号： B01D2968

CPC分类号： B01D24/167 ,  B01D24/36 ,  B01D24/4631

摘要： A filtering system with an improved backwashing capability includes influent and effluent means, and uses plastic beads as the filtering medium. The system further includes a plurality of backwash jets that eject water under pressure at angles such that the force of the water contacting the filter beads breaks apart the beads. Separating the filter beads allows the backwash operation to provide a far more thorough cleaning of the filter tank. This leads to improved performance of the filter and extended life of the filter media.

摘要翻译： 具有改进的反冲洗能力的过滤系统包括流入和流出装置，并使用塑料珠作为过滤介质。 该系统还包括多个反冲洗喷射器，其以一定角度在压力下喷射水，使得接触过滤珠的水分力分离珠粒。 分离过滤珠允许反冲洗操作提供更彻底的清洁过滤罐。 这样可以提高过滤器的性能，延长过滤介质的使用寿命。

公开(公告)号：US06960774B2

公开(公告)日：2005-11-01

申请号：US10700175

申请日：2003-11-03

申请人： Elfido Coss, Jr. ,  Patrick M. Cowan ,  Richard J. Markle ,  Tom Tse

发明人： Elfido Coss, Jr. ,  Patrick M. Cowan ,  Richard J. Markle ,  Tom Tse

IPC分类号： H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J37/304

摘要： The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.

公开(公告)号：US06797967B1

公开(公告)日：2004-09-28

申请号：US10082567

申请日：2002-02-25

申请人： Tom Tse ,  Zhiyong Zhao ,  David M. Hendrix

发明人： Tom Tse ,  Zhiyong Zhao ,  David M. Hendrix

IPC分类号： G21K500

CPC分类号： H01J37/3171 ,  H01J2237/31703

摘要： A method is presented for compensating for the effects of charge neutralization in calculating the ‘true’ ion dose, i.e., the dose assuming no changes of charge state of ions during an implantation process. An ion beam is generated under normal operating conditions, e.g., stable vacuum exists, and no target is being implanted. At least one additional detector would be positioned in the target chamber, and a dose measurement conducted simultaneously with a measurement of the beam current with the Faraday, which is located outside of the charge neutralization region, to establish a reference ratio. A wafer is then placed at the target location, and simultaneous measurements made with the additional detector and Faraday, as before, to determine the ratio between the beam current and the detector during wafer implantation. Any drift from the reference ratio indicates the dose error due to charge neutralization from wafer outgassing during implantation. Software for controlling various parameters could be configured to use the ratio drift data to change the dose counter to compensate for the dose error due to charge neutralization.

摘要翻译： 提出了一种用于补偿电荷中和在计算“真实”离子剂量时的影响的方法，即假定在注入过程中离子的电荷状态没有变化的剂量。 在正常操作条件下产生离子束，例如存在稳定的真空，并且不会植入靶。 至少一个额外的检测器将被定位在目标腔室中，并且与位于电荷中和区域外侧的法拉第的射束电流的测量同时进行剂量测量，以建立参考比。 然后将晶片放置在目标位置，并且如前所述使用附加检测器和法拉第进行的同时测量来确定在晶片植入期间束电流和检测器之间的比率。 参考比值的任何偏差表示由植入过程中的晶片放气引起的电荷中和引起的剂量误差。 用于控制各种参数的软件可以配置为使用比率漂移数据来改变剂量计数器，以补偿由于电荷中和引起的剂量误差。

公开(公告)号：US20050092939A1

公开(公告)日：2005-05-05

申请号：US10700175

申请日：2003-11-03

申请人： Elfido Coss ,  Patrick Cowan ,  Richard Markle ,  Tom Tse

发明人： Elfido Coss ,  Patrick Cowan ,  Richard Markle ,  Tom Tse

IPC分类号： H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J37/304

摘要： The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.

摘要翻译： 本发明一般涉及用于离子注入过程的故障检测和控制方法以及用于执行其的系统。 在一个说明性实施例中，该方法包括对离子注入工具执行调谐过程，调谐过程导致用于离子注入工具的至少一个工具参数，选择或创建要在离子注入工艺中执行的离子注入过程的故障检测模型 基于由调谐过程产生的工具参数的离子注入工具，以及使用所选或创建的故障检测模型监测在离子注入工具中执行的离子注入过程。 在另一个说明性实施例中，该方法包括对离子注入工具执行调谐过程，该调整过程导致用于离子注入工具的至少一个工具参数，以及基于历史来确定调整过程产生的工具参数是否可接受 用于在离子注入工具中进行离子注入工艺的至少一个衬底中形成的注入区的测量数据。