Humidity-sensitive element
    1.
    发明授权
    Humidity-sensitive element 失效
    湿度敏感元件

    公开(公告)号:US4642601A

    公开(公告)日:1987-02-10

    申请号:US361903

    申请日:1982-03-18

    IPC分类号: G01N27/12 H01L7/00

    CPC分类号: G01N27/121

    摘要: The humidity-sensitive element of this invention is composed of an insulating substrate (1), a pair of electrodes (2, 3) mounted thereon, and a humidity-sensitive material (8) covering the electrodes. The humidity-sensitive material (8) has a property to change its electric resistance depending on the moisture content in the atmosphere and is formed from fine particles each having a hydrophobic core and a hydrophilic group-containing surface layer covering the core. This humidity-sensitive element exhibits a nearly linear relationship between logarithum of electric resistance and relative humidity and small hysteresis, permitting a precise measurement of relative humidity. Insulating substrate (1) and electrodes (2,3) are preferred to form from an insulating layer of silicon semiconductor and conductive monosilicon formed on it, respectively. This permits size reduction of humidity-sensitive elements or devices.

    摘要翻译: PCT No.PCT / JP81 / 00166 Sec。 371日期1982年3月18日 102(e)1982年3月18日PCT PCT 1991年7月20日PCT公布。 公开号WO82 / 00362 日本1982年2月4日。本发明的湿度敏感元件由绝缘基板(1),安装在其上的一对电极(2,3)和覆盖电极的湿度敏感材料(8)组成。 湿度敏感材料(8)具有根据大气中的水分含量而改变其电阻的性质,并且由具有疏水性芯和覆盖芯的含亲水性基团的表面层的细颗粒形成。 该湿度敏感元件表现出电阻对数相对湿度和滞后小的近似线性关系,可以精确测量相对湿度。 绝缘基板(1)和电极(2,3)优选分别从其上形成的硅半导体绝缘层和导电单晶硅形成。 这允许湿度敏感元件或器件的尺寸减小。