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公开(公告)号:US4983495A
公开(公告)日:1991-01-08
申请号:US456624
申请日:1989-12-29
IPC分类号: G03F7/039
CPC分类号: G03F7/039
摘要: Positive resist patterns prepared by using a derivative of polyacrylic acid esters containing halogen expressed by the following general formula for the resist material; ##STR1## (where A is a structural unit which is derived from monomers having a copolymerable double bond, and X is either a halogen atom or a methyl group. m is a positive integer, n is 0 or a positive integer, n/m is 0 to 2 and m+n are 20 to 20,000. Y.sub.1 to Y.sub.5 are a fluorine or hydrogen atom and at least one of them is a fluorine atom).