公开(公告)号：US07465923B2

公开(公告)日：2008-12-16

申请号：US11654663

申请日：2007-01-18

申请人： Toshiya Nishiumi ,  Koki Ando

发明人： Toshiya Nishiumi ,  Koki Ando

IPC分类号： G01N23/00

CPC分类号： H01J37/295 ,  G01B15/02 ,  G01N23/20058

摘要： The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result apparatus therefor, and a cross-sectional microstructure of the LSI device. The method includes thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, irradiating an electron beam to the semiconductor chip, detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, removing an electron beam diffracted due to the substrate crystal, and comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.

摘要翻译： 本发明涉及在LSI（大规模集成）器件的制造工艺中的测试方法，其结果装置以及LSI器件的横截面微结构。 该方法包括使半导体芯片变薄，使得半导体芯片包括基板晶体和通过制造工艺添加的部分，向半导体芯片照射电子束，检测透过半导体芯片的电子束，从而获得电子束衍射 去除由于衬底晶体衍射的电子束，并且在电子束衍射图像中比较从衬底晶体获得的光栅条纹的厚度与通过制造过程添加的部分的厚度。

公开(公告)号：US20070114410A1

公开(公告)日：2007-05-24

申请号：US11654663

申请日：2007-01-18

申请人： Toshiya Nishiumi ,  Koki Ando

发明人： Toshiya Nishiumi ,  Koki Ando

IPC分类号： G21K7/00 ,  G01N23/00

CPC分类号： H01J37/295 ,  G01B15/02 ,  G01N23/20058

摘要： The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result obtained by the manufacturing process, a testing apparatus therefor, and a semiconductor device suitable for the test. The present invention relates, in particular, to a testing method used to immediately and accurately perform a test of the cross-sectional microstructure of an LSI device obtained by the manufacturing process. The above testing method is characterized by including a sample production step of thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, a step of irradiating an electron beam to the semiconductor chip, a step of detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, a step of removing an electron beam diffracted due to the substrate crystal, and a step of comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.

摘要翻译： 本发明涉及在LSI（大规模集成）装置的制造工艺中测试通过制造过程获得的结果，其测试装置和适用于该测试的半导体器件的方法。 本发明特别涉及一种用于立即且准确地进行通过制造工艺获得的LSI器件的横截面微结构测试的测试方法。 上述测试方法的特征在于包括：将半导体芯片变薄以使得半导体芯片包括基板晶体和通过制造工艺添加的部分的样品制备步骤，向半导体芯片照射电子束的步骤， 检测通过半导体芯片透射的电子束，从而获得电子束衍射图像，去除由于衬底晶体衍射的电子束的步骤，以及在电子束衍射图像中比较光栅条纹的厚度 通过制造工艺加入的部分的厚度从基板晶体获得。