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公开(公告)号：US11005023B2
公开(公告)日：2021-05-11
申请号：US16641235
申请日：2018-08-23
IPC分类号： G11C11/44 , H01L39/22 , G11C11/16 , H01L39/12 , H03K19/195
摘要： A superconducting logic element includes a superconducting tunnel junction including first and second superconductors. First and second insulating ferromagnets in contact with the first and second superconductors, respectively, generate by magnetic proximity effect a predetermined density of spin-split states in the first and second superconductors, respectively. A writing element applies a writing current to at least a superconductor and is in contact with one of the first or second insulating ferromagnets, so that the first and second insulating ferromagnets commute, by the magnetic field generated by the applied writing current, between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other. The superconducting tunnel junction includes the first or second superconductor between which an insulating layer is arranged with tunnel barrier function, the insulating layer selected between a layer selected from the group consisting of AlOx, AlN, and the first or second insulating ferromagnet.
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公开(公告)号：US20200227617A1
公开(公告)日：2020-07-16
申请号：US16641235
申请日：2018-08-23
申请人： CONSIGLIO NAZIONALE DELLE RICERCHE , CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS (CSIC) , UNIVERSIDAD DEL PAÍS VASCO (UPV)
IPC分类号： H01L39/22 , G11C11/44 , G11C11/16 , H03K19/195 , H01L39/12
摘要： A superconducting logic element includes a superconducting tunnel junction including first and second superconductors. First and second insulating ferromagnets in contact with the first and second superconductors, respectively, generate by magnetic proximity effect a predetermined density of spin-split states in the first and second superconductors, respectively. A writing element applies a writing current to at least a superconductor and is in contact with one of the first or second insulating ferromagnets, so that the first and second insulating ferromagnets commute, by the magnetic field generated by the applied writing current, between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other. The superconducting tunnel junction includes the first or second superconductor between which an insulating layer is arranged with tunnel barrier function, the insulating layer selected between a layer selected from the group consisting of AlOx, AlN, and the first or second insulating ferromagnet.
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