USER DISTRIBUTION TO SUB-BANDS IN MULTIPLE ACCESS COMMUNICATIONS SYSTEMS

    公开(公告)号:US20210021396A1

    公开(公告)日:2021-01-21

    申请号:US17042478

    申请日:2019-03-20

    Abstract: A method of determining a performance metric for a selection of a first user and a second user among a set of candidate users for attribution to a sub-band in a multiple access communications system based on Non-Orthogonal Multiple Access (NOMA), is provided wherein the first user (k1) and the second user (k2) are selected as the pair of candidate users corresponding to an extremum of the ratio between a first term reflecting the total throughput achievable by any pair of the candidate users assigned to the sub-band (s) under consideration, and a second term reflecting the known throughput achieved by that same pair of candidate users over a predetermined preceding period. Implementations include a method of determining a performance metric is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase for a specific sub-band, a first user is selected for that band on the basis of one or more criteria such as user priority. Then a second sub-band user maximizing or minimizing the performance metric.

    METHOD AND APPARATUS FOR USER DISTRIBUTION TO SUB-BANDS IN MULTIPLE ACCESS COMMUNICATIONS SYSTEMS

    公开(公告)号:US20210083814A1

    公开(公告)日:2021-03-18

    申请号:US17042453

    申请日:2019-03-20

    Abstract: A mechanism is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase, a first user is selected for a sub band, for example on the basis of a user priority. Users having complementary channel gains to that of the first user are identified, and then a second sub-band user maximizing a performance metric reflecting the achieved throughput, and/or fairness across users, is selected to accompany the first user on that sub-band. The initial assignment phase may terminate once all users have been assigned to a sub-band once. After the first phase is complete, the first user for each sub-band may be the user whose achieved total throughput is furthest from a target throughput defined for that user, wherein each user is assigned to the remaining sub-band to which no first user is currently attributed offering the highest channel gain for that user. Mechanisms for determining user priority, making provisional and definitive power allocations, and performance metrics are proposed.

    HEMT transistor
    6.
    发明授权

    公开(公告)号:US10177239B2

    公开(公告)日:2019-01-08

    申请号:US15535933

    申请日:2015-12-15

    Abstract: Heterojunction structure, also referred to as a heterostructure, of semiconductor material, in particular for a high electron mobility transistor (HEMT), includes a substrate, a stack of at least three buffer layers of a same semiconductor material with a wide bandgap EG1 based on a column-III nitride, namely an unintentionally doped first buffer layer, a second buffer layer, an unintentionally doped third buffer layer, an unintentionally doped intermediate layer, and a barrier layer arranged on the intermediate layer, said barrier layer being of a semiconductor material with a wide bandgap EG2 based on a column-III nitride; the second buffer layer has constant P+ doping throughout some or all of its thickness; and the third buffer layer includes a first region which is unintentionally doped throughout its entire thickness and at least one second region adjacent to said first region with N+ doping surrounding the first region.

    HEMT TRANSISTOR
    7.
    发明申请
    HEMT TRANSISTOR 审中-公开

    公开(公告)号:US20180069090A1

    公开(公告)日:2018-03-08

    申请号:US15535933

    申请日:2015-12-15

    Abstract: Heterojunction structure, also referred to as a heterostructure, of semiconductor material, in particular for a high electron mobility transistor (HEMT), includes a substrate, a stack of at least three buffer layers of a same semiconductor material with a wide bandgap EG1 based on a column-III nitride, namely an unintentionally doped first buffer layer, a second buffer layer, an unintentionally doped third buffer layer, an unintentionally doped intermediate layer, and a barrier layer arranged on the intermediate layer, said barrier layer being of a semiconductor material with a wide bandgap EG2 based on a column-III nitride; the second buffer layer has constant P+ doping throughout some or all of its thickness; and the third buffer layer includes a first region which is unintentionally doped throughout its entire thickness and at least one second region adjacent to said first region with N+ doping surrounding the first region.

    User distribution to sub-bands in multiple access communications systems

    公开(公告)号:US11296852B2

    公开(公告)日:2022-04-05

    申请号:US17042478

    申请日:2019-03-20

    Abstract: A method of determining a performance metric for a selection of a first user and a second user among a set of candidate users for attribution to a sub-band in a multiple access communications system based on Non-Orthogonal Multiple Access (NOMA), is provided wherein the first user (k1) and the second user (k2) are selected as the pair of candidate users corresponding to an extremum of the ratio between a first term reflecting the total throughput achievable by any pair of the candidate users assigned to the sub-band (s) under consideration, and a second term reflecting the known throughput achieved by that same pair of candidate users over a predetermined preceding period. Implementations include a method of determining a performance metric is presented for attributing users to one or more of a plurality of sub-bands in a multiple access communications system, wherein in an initial assignment phase for a specific sub-band, a first user is selected for that band on the basis of one or more criteria such as user priority. Then a second sub-band user maximizing or minimizing the performance metric.

    HETEROJUNCTION-BASED HEMT TRANSISTOR
    10.
    发明申请
    HETEROJUNCTION-BASED HEMT TRANSISTOR 有权
    基于异质结的HEMT晶体管

    公开(公告)号:US20160254377A1

    公开(公告)日:2016-09-01

    申请号:US15028671

    申请日:2014-10-10

    Abstract: A heterojunction structure of semiconductor material, for a high electron mobility transistor includes a substrate, a buffer layer, arranged on the substrate, of a large bandgap semiconductor material, based on a nitride from column III, where the buffer layer is not intentionally doped with n-type carriers, a barrier layer arranged above the buffer layer, of a large bandgap semiconductor material based on a nitride from column III, where the width of the bandgap of the barrier layer is less than the width of the bandgap of the buffer layer. The heterojunction structure additionally comprises an intentionally doped area, of a material based on a nitride from column III identical to the material of the buffer layer, in a plane parallel to the plane of the substrate and a predefined thickness along a direction orthogonal to the plane of the substrate, where the area is comprised in the buffer layer.

    Abstract translation: 对于高电子迁移率晶体管,用于高电子迁移率晶体管的异质结结构包括基于来自第III列的氮化物的大带隙半导体材料的布置在衬底上的衬底,缓冲层,其中缓冲层不是有意地掺杂有 基于来自第III列的氮化物的大带隙半导体材料的n型载流子,设置在缓冲层上方的阻挡层,其中阻挡层的带隙的宽度小于缓冲层的带隙的宽度 。 该异质结结构还包括有意地掺杂的区域,基于与平行于衬底的平面的平面相同的来自第III列的缓冲层材料的氮化物的材料和沿着与该平面垂直的方向的预定厚度 的衬底,其中该区域包括在缓冲层中。

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