公开(公告)号：US20230067444A1

公开(公告)日：2023-03-02

申请号：US17517255

申请日：2021-11-02

申请人： United Renewable Energy Co., Ltd.

发明人： Hung-Ming LIN ,  Hsiu-Hung LIU ,  Chen-Po YU ,  Chun-Liang CHIANG

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/048

摘要： A solar cell includes a silicon substrate, a passivation layer, a first protection layer, a second protection layer, and a third protection layer. The material of the passivation layer is aluminum oxide, and the passivation layer is on the lower surface of the silicon substrate. The material of the first protection layer is silicon oxynitride, and the first protection layer is on a surface of the passivation layer opposite to the silicon substrate. The material of the second protection layer is silicon nitride, and the second protection layer is on a surface of the first protection layer opposite to the passivation layer. The material of the third protection layer is silicon oxynitride or silicon oxide, and the third protection layer is on a surface of the second protection layer opposite to the first protection layer.

公开(公告)号：US20220115545A1

公开(公告)日：2022-04-14

申请号：US17156980

申请日：2021-01-25

申请人： United Renewable Energy Co., Ltd.

发明人： Chih-Jeng HUANG ,  Jen-Hao SONG ,  An-Chih HSUEH

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/068

摘要： A tunnel oxide passivated contact solar cell includes a semiconductor substrate, an emitter film layer, an anti-reflective layer, a first electrode, a tunnel oxide layer, a semiconductor film layer and a second electrode. The semiconductor substrate is a first type doped semiconductor, and the first surface of the semiconductor substrate includes a zigzag structure. The emitter film layer is a second type doped semiconductor film. The anti-reflective layer is provided with a first opening. A part of the first electrode is in the first opening and electrically connected to the emitter film layer. The tunnel oxide layer has a thickness ranging from 1.3 nm to 1.6 nm, the thickness difference measured is less than 4%, and the tunnel oxide layer is made by an atomic layer deposition process. The semiconductor film layer is a first type doped semiconductor. The second electrode is electrically connected to the semiconductor film layer.