公开(公告)号：US20050279382A1

公开(公告)日：2005-12-22

申请号：US11140463

申请日：2005-05-27

申请人： Uwe Höckele ,  Andrew Johnson ,  Hans-Georg Kessler ,  Orest Nowik ,  Kai-Alexander Schreiber ,  Mark Sistern ,  Hubert Winzig

发明人： Uwe Höckele ,  Andrew Johnson ,  Hans-Georg Kessler ,  Orest Nowik ,  Kai-Alexander Schreiber ,  Mark Sistern ,  Hubert Winzig

IPC分类号： B08B6/00 ,  B08B7/00 ,  C23C20060101 ,  C23C16/44 ,  C23F4/00

CPC分类号： H01J37/32862 ,  B08B7/00 ,  B08B7/0035 ,  C23C16/4405

摘要： A method for cleaning silicon-containing deposits in process chamber is described. Fluorine-containing compounds and additional compounds are used for the cleaning. The deposits are removed using a cleaning gas contains fluorine-containing compounds, at least 50% of which have more than one carbon atom and are C4F8 or C2F6 molecules, and additional compounds, at least 50% of which have at least one oxygen atom and at least 50% are N2O molecules. A pressure in the chamber is between 266 Pa and 665 Pa. The method permits economical and environmentally friendly cleaning of the process chamber.

摘要翻译： 描述了一种在处理室中清洗含硅沉积物的方法。 含氟化合物和其他化合物用于清洗。 使用包含含氟化合物的清洁气体除去沉积物，其中至少50％具有多于一个碳原子并且为C 4 N 8或C C 其中至少有50％具有至少一个氧原子和至少50％的分子是N 2 O分子 。 室内的压力在266Pa和665Pa之间。该方法允许对处理室进行经济和环境友好的清洁。