Chemical process
    1.
    发明授权

    公开(公告)号:US4066688A

    公开(公告)日:1978-01-03

    申请号:US325174

    申请日:1973-01-19

    摘要: It is disclosed that citric acid and salts thereof are readily produced by reacting acetone dicarboxyl ions, cyanide ions and alkali metal ions to produce an intermediate system which is subsequently reacted in an excess caustic system to form a salt of citric acid and that the salt is readily recovered by precipitation from the excess caustic system under proper conditions of concentration and temperature without requiring the formation of calcium salts. The recovered salt may be used directly or may be subjected to additional purification or may be converted to citric acid or other salts thereof by treatment with an acidification system such as sulfuric acid.

    Process for the purification of citric acid
    2.
    发明授权
    Process for the purification of citric acid 失效
    柠檬酸纯化方法

    公开(公告)号:US4113771A

    公开(公告)日:1978-09-12

    申请号:US807738

    申请日:1977-06-17

    CPC分类号: C07C51/487

    摘要: It is disclosed that citric acid and salts thereof are readily produced by reacting acetone dicarboxyl ions, cyanide ions and alkali metal ions to produce an intermediate system which is subsequently reacted in an excess caustic system to form a salt of citric acid and that the salt is readily recovered by precipitation from the excess caustic system under proper conditions of concentration and temperature without requiring the formation of calcium salts. The recovered salt may be used directly or may be subjected to additional purification or may be converted to citric acid or other salts thereof by treatment with an acidification system such as sulfuric acid.

    摘要翻译: 公开了通过使丙酮二羧酸离子,氰化物离子和碱金属离子反应来制备柠檬酸及其盐,以产生中间体系,其随后在过量苛性体系中反应形成柠檬酸盐, 通过在合适的浓度和温度条件下从过量的苛性碱体系中沉淀而不需要形成钙盐而容易地回收。 回收的盐可以直接使用或可以进行额外的纯化,或者可以通过用酸化系统如硫酸处理而转化为柠檬酸或其它盐。

    Chemical vapor deposition reactor and process
    3.
    发明授权
    Chemical vapor deposition reactor and process 失效
    化学气相沉积反应器及工艺

    公开(公告)号:US4981102A

    公开(公告)日:1991-01-01

    申请号:US833256

    申请日:1986-02-27

    IPC分类号: C23C16/44 C23C16/455

    CPC分类号: C23C16/45506 C23C16/455

    摘要: A reactor having a heated liner for producing silicon by chemical vapor deposition (CVD) and means for supplying a gas stream in the turbulent flow region. A gas stream including a silicon-containing compound is passed through a deposition chamber at turbulent flow rates for deposition of silicon on a non-reactive substrate liner heated above the decomposition temperature of the silicon-containing compound. Optionally, the liner is removable from the reactor for separation of deposited metal. Also optionally, the temperature of the liner in situ may be raised above the melting point of the deposited metal for melt out and recovery.

    摘要翻译: 具有通过化学气相沉积(CVD)制造硅的加热衬垫的反应器和用于在湍流区域中供应气流的装置。 包含含硅化合物的气流以湍流速度通过沉积室,用于在加热到含硅化合物的分解温度以上的非反应性衬底衬底上沉积硅。 任选地,衬里可以从反应器移除以分离沉积的金属。 也可选地,衬垫的原位温度可以升高到沉积金属的熔点以上,以便熔化和回收。