公开(公告)号：US07821083B2

公开(公告)日：2010-10-26

申请号：US12137796

申请日：2008-06-12

申请人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

发明人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

IPC分类号： H01L27/88

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/513

摘要： A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

摘要翻译： 半导体器件包括含有铝的介电常数大于氧化硅膜/氧化硅膜/硅衬底的介电常数的栅电极/高k电介质绝缘膜的结构，并且具有扩散层 通过热处理将铝原子或铝离子扩散到氧化硅膜或氧化硅膜和硅衬底之间的界面而形成。 作为高k电介质膜，使用层叠膜或铪和铝的比例为约2：8〜8：2的氧化铪和氧化铝的混合膜。 热处理在约500至1000℃的任何温度下进行约1至100秒的任何时间段。

公开(公告)号：US20080308865A1

公开(公告)日：2008-12-18

申请号：US12137796

申请日：2008-06-12

申请人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

发明人： Wenwu Wang ,  Wataru Mizubayashi ,  Koji Akiyama

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/513

摘要： A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

摘要翻译： 半导体器件包括含有铝的介电常数大于氧化硅膜/氧化硅膜/硅衬底的介电常数的栅电极/高k电介质绝缘膜的结构，并且具有扩散层 通过热处理将铝原子或铝离子扩散到氧化硅膜或氧化硅膜和硅衬底之间的界面而形成。 作为高k电介质膜，使用层叠膜或铪和铝的比例为约2：8〜8：2的氧化铪和氧化铝的混合膜。 热处理在约500至1000℃的任何温度下进行约1至100秒的任何时间段。