公开(公告)号：US07642838B2

公开(公告)日：2010-01-05

申请号：US12054233

申请日：2008-03-24

申请人： Wen-Shyen Chao

发明人： Wen-Shyen Chao

IPC分类号： G05F1/10

CPC分类号： H02M3/07

摘要： A voltage redoubling circuit, wherein said circuit relies on a voltage-detecting unit, an oscillating unit, an inversing unit, a first switching device, a second switching device, a third switching device, a fourth switching device, and a fifth switching device to pump a reference voltage to an output voltage. In such a way, a conducted memory cell can be quickly and accurately accessed via a circuit operated in a low voltage region by a single on-and-off signal rather than a number of pulse control signals.

摘要翻译： 一种电压倍增电路，其中所述电路依赖于电压检测单元，振荡单元，反相单元，第一开关装置，第二开关装置，第三开关装置，第四开关装置和第五开关装置， 将参考电压泵送到输出电压。 以这种方式，可以通过单个导通和断开信号而不是多个脉冲控制信号，通过在低电压区域中操作的电路快速且准确地访问传导存储单元。

公开(公告)号：US20090219736A1

公开(公告)日：2009-09-03

申请号：US12054233

申请日：2008-03-24

申请人： WEN-SHYEN CHAO

发明人： WEN-SHYEN CHAO

IPC分类号： H02M3/335

CPC分类号： H02M3/07

摘要： A voltage redoubling circuit, wherein said circuit relies on a voltage-detecting unit, an oscillating unit, an inversing unit, a first switching device, a second switching device, a third switching device, a fourth switching device, and a fifth switching device to pump a reference voltage to an output voltage. In such a way, a conducted memory cell can be quickly and accurately accessed via a circuit operated in a low voltage region by a single on-and-off signal rather than a number of pulse control signals.

摘要翻译： 一种电压倍增电路，其中所述电路依赖于电压检测单元，振荡单元，反相单元，第一开关装置，第二开关装置，第三开关装置，第四开关装置和第五开关装置， 将参考电压泵送到输出电压。 以这种方式，可以通过单个导通和断开信号而不是多个脉冲控制信号，通过在低电压区域中操作的电路快速且准确地访问传导存储单元。