公开(公告)号：US07153774B2

公开(公告)日：2006-12-26

申请号：US10165679

申请日：2002-06-06

申请人： Stefan Hau-Riege ,  Christine Hau-Riege ,  Wen-Yue Zheng

发明人： Stefan Hau-Riege ,  Christine Hau-Riege ,  Wen-Yue Zheng

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  H01L21/76858

摘要： A method of making a semiconductor device is described. That method includes forming a copper containing layer on a substrate, and forming an alloying layer that includes an alloying element on the copper containing layer. After applying heat to cause an intermetallic layer that includes copper and the alloying element to form on the surface of the copper containing layer, a barrier layer is formed on the intermetallic layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在基板上形成含铜层，并且在含铜层上形成包含合金元素的合金化层。 在加热之后，在含铜层的表面上形成包含铜和合金元素的金属间层，在金属间层上形成阻挡层。

公开(公告)号：US07897508B2

公开(公告)日：2011-03-01

申请号：US11361070

申请日：2006-02-22

申请人： Wen Yue Zheng ,  Gang Mao ,  Jian Fei Cui

发明人： Wen Yue Zheng ,  Gang Mao ,  Jian Fei Cui

IPC分类号： H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/76877

摘要： Embodiments in accordance with the present invention provide methods of forming a metal interconnect structure which avoid defects arising from copper migration. In accordance with particular embodiments, an electroplated copper feature is subjected to a brief thermal anneal prior to chemical mechanical polishing and subsequent formation of an overlying barrier layer. This thermal anneal intentionally provokes migration of the copper and resulting formation of hillocks or voids, which are then removed by a CMP step. The barrier layer may thus subsequently be formed over a defect-free surface, which has already experienced stress release along grain boundaries as a result of the thermal treatment.

摘要翻译： 根据本发明的实施例提供了形成金属互连结构的方法，其避免了由铜迁移引起的缺陷。 根据具体实施例，在化学机械抛光和随后形成覆盖的阻挡层之前，电镀铜特征经受短暂的热退火。 这种热退火有意地引起铜的迁移并导致形成小丘或空隙，然后通过CMP步骤除去。 因此，阻挡层随后可以形成在无缺陷表面上，其由于热处理已经经历了沿着晶界的应力释放。