摘要:
A double amputee conveyance includes a main frame with two rear wheels, for propulsion, and two swiveled castor wheels, for directional control, attached to the main frame. A seat assembly is attached to the main frame to provide relative movement between a rearward and a forward position and is constructed so that a forward edge extends beyond the main frame in the forward position. A stabilizing mechanism includes a stabilizing bar pivotally attached to the main frame so as to extend outwardly in a forward direction from the main frame and for movement between a raised and a lowered position. An activating lever is linked to the stabilizing bar to move the bar into the raised or the lowered position. The stabilizing bar engages the floor in the lowered position to stabilize the conveyance with the seat assembly in the forward position.
摘要:
A computer software installation, distribution and maintenance method that manufactures one or more software products on an end user's target computer system. The method operates by generating a set of blueprints and raw materials for one or more software products to be distributed; provides the blueprints and raw materials to an end user; and manufactures the software products on the target computer according to the blueprints and using the raw materials. The method optionally provides for the testing of the target computer to determine its suitability for operating the software products, determines whether and updates to the software products are available and obtains them prior to manufacture; and tests and/or demonstrates the software products after manufacture.
摘要:
A dynamic random access memory device includes a plurality of dynamic memory cells. Each dynamic memory cell is formed at least in part by a cell plate which is connected to a normally fixed reference voltage. The reference voltage is produced by a cell plate generator. The cell plate generator has a first group of voltage divider transistors connected in series from an upper supply voltage source, and a second group of voltage divider transistors connected in series from a lower supply voltage source. The first and second groups of series-connected voltage divider elements form two intermediate voltage divider nodes which are connected to establish the reference voltage. The voltage divider elements are selected to normally establish the reference voltage at a nominal operating value. However, a first bypass transistor is connected around at least one of the voltage divider elements of the first group to selectively bypass it and to thereby raise the reference voltage to a first adjusted testing value which is greater than the nominal operating value. A second bypass transistor is connected around at least one of the voltage divider elements of the second group to selectively bypass it and to thereby lower the reference voltage to a second adjusted testing value which is lower than the nominal operating value.
摘要:
A dynamic random access memory device includes a plurality of dynamic memory cells. Each dynamic memory cell is formed at least in part by a cell plate which is connected to a normally fixed reference voltage. The reference voltage is produced by a cell plate generator. The cell plate generator has a first group of voltage divider transistors connected in series from an upper supply voltage source, and a second group of voltage divider transistors connected in series from a lower supply voltage source. The first and second groups of series-connected voltage divider elements form two intermediate voltage divider nodes which are connected to establish the reference voltage. The voltage divider elements are selected to normally establish the reference voltage at a nominal operating value. However, a first bypass transistor is connected around at least one of the voltage divider elements of the first group to selectively bypass it and to thereby raise the reference voltage to a first adjusted testing value which is greater than the nominal operating value. A second bypass transistor is connected around at least one of the voltage divider elements of the second group to selectively bypass it and to thereby lower the reference voltage to a second adjusted testing value which is lower than the nominal operating value.
摘要:
A dynamic random access memory device includes a plurality of dynamic memory cells. Each dynamic memory cell is formed at least in part by a cell plate which is connected to a normally fixed reference voltage. The reference voltage is produced by a cell plate generator. The cell plate generator has a first group of voltage divider transistors connected in series from an upper supply voltage source, and a second group of voltage divider transistors connected in series from a lower supply voltage source. The first and second groups of series-connected voltage divider elements form two intermediate voltage divider nodes which are connected to establish the reference voltage. The voltage divider elements are selected to normally establish the reference voltage at a nominal operating value. However, a first bypass transistor is connected around at least one of the voltage divider elements of the first group to selectively bypass it and to thereby raise the reference voltage to a first adjusted testing value which is greater than the nominal operating value. A second bypass transistor is connected around at least one of the voltage divider elements of the second group to selectively bypass it and to thereby lower the reference voltage to a second adjusted testing value which is lower than the nominal operating value.
摘要:
A dynamic random access memory device includes a plurality of dynamic memory cells. Each dynamic memory cell is formed at least in part by a cell plate which is connected to a normally fixed reference voltage. The reference voltage is produced by a cell plate generator. The cell plate generator has a first group of voltage divider transistors connected in series from an upper supply voltage source, and a second group of voltage divider transistors connected in series from a lower supply voltage source. The first and second groups of series-connected voltage divider elements form two intermediate voltage divider nodes which are connected to establish the reference voltage. The voltage divider elements are selected to normally establish the reference voltage at a nominal operating value. However, a first bypass transistor is connected around at least one of the voltage divider elements of the first group to selectively bypass it and to thereby raise the reference voltage to a first adjusted testing value which is greater than the nominal operating value. A second bypass transistor is connected around at least one of the voltage divider elements of the second group to selectively bypass it and to thereby lower the reference voltage to a second adjusted testing value which is lower than the nominal operating value.