公开(公告)号：US06295332B1

公开(公告)日：2001-09-25

申请号：US09332206

申请日：1999-06-12

申请人： Robert Allen Selzer ,  William Rudolf Friml ,  Joe Baker Gagnon ,  Robert Harrison Macklin ,  Franz Ludwig Rauch ,  Heinz Siegert ,  Klaus Simon

发明人： Robert Allen Selzer ,  William Rudolf Friml ,  Joe Baker Gagnon ,  Robert Harrison Macklin ,  Franz Ludwig Rauch ,  Heinz Siegert ,  Klaus Simon

IPC分类号： G21K500

CPC分类号： G03F7/70216 ,  G03F7/708 ,  G21K5/00 ,  Y10S430/168

摘要： The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities. The steps involved in the method include the use and development of horizontal beams from a synchrotron or point source of x-ray beams; preparation of submicrometer, transverse horizontal and vertical stepper stages and frames; providing a stepper base frame for the proper housing and mating of the x-ray beam; minimizing the effects of temperature and airflow control by means of a environmental chamber; transporting, handling and prealigning wafers and other similar items for tight process control; improving the control and sensing of positional accuracy through the use of differential variable reluctance transducers; controlling the continuous gap and all six degrees of freedom of the wafer being treated with a multiple variable stage control; incorporating alignment systems using unambiguous targets to provide data to align one level to the next level; beam transport, shaping or shaping devices, to include x-ray point sources; using an inline collimator or concentrator for collimating or concentrating the x-ray beams; and, imaging the mask pattern at the precise moment for optimum effectiveness.

公开(公告)号：US06845145B2

公开(公告)日：2005-01-18

申请号：US09876443

申请日：2001-06-07

申请人： Robert Allen Selzer ,  Franz Ludwig Rauch ,  Heinz Siegert ,  Klaus Simon ,  William Rudolf Friml ,  Joe Baker Gagnon ,  Robert Harrison Macklin

发明人： Robert Allen Selzer ,  Franz Ludwig Rauch ,  Heinz Siegert ,  Klaus Simon ,  William Rudolf Friml ,  Joe Baker Gagnon ,  Robert Harrison Macklin

IPC分类号： G03F7/20 ,  G21K5/00

CPC分类号： G03F7/70216 ,  G03F7/708 ,  G21K5/00 ,  Y10S430/168

摘要： The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities. The steps involved in the method include the use and development of horizontal beams from a synchrotron or point source of x-ray beams; preparation of submicrometer, transverse horizontal and vertical stepper stages and frames; providing a stepper base frame for the proper housing and mating of the x-ray beam; minimizing the effects of temperature and airflow control by means of a environmental chamber; transporting, handling and prealigning wafers and other similar items for tight process control; improving the control and sensing of positional accuracy through the use of differential variable reluctance transducers; controlling the continuous gap and all six degrees of freedom of the wafer being treated with a multiple variable stage control; incorporating alignment systems using unambiguous targets to provide data to align one level to the next level; beam transport, shaping or shaping devices, to include x-ray point sources; using an inline collimator or concentrator for collimating or concentrating the x-ray beams; and, imaging the mask pattern at the precise moment for optimum effectiveness.

摘要翻译： 本发明涉及生产以超过当前x射线光刻能力的速度和尺寸产生的高质量半导体器件。 该方法涉及的步骤包括使用和开发来自同步加速器或X射线束的点光源的水平光束; 亚微米，横向水平和垂直步进台和框架的准备; 提供用于X射线束的适当壳体和配合的步进基座; 通过环境室最小化温度和气流控制的影响; 运输，处理和预先对准晶片和其他类似物品以进行严格的过程控制; 通过使用差分可变磁阻传感器改善位置精度的控制和感测; 控制用多变量级控制处理的晶片的连续间隙和全部六个自由度; 结合使用明确目标的对准系统来提供数据以将一个级别与下一级对齐; 光束传输，成形或成形装置，以包括x射线点源; 使用在线准直器或集中器来准直或集中X射线束; 并且在精确时刻对掩模图案进行成像以获得最佳效果。