公开(公告)号：US07955924B2

公开(公告)日：2011-06-07

申请号：US11651542

申请日：2007-01-10

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L21/8238

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

公开(公告)号：US20110204468A1

公开(公告)日：2011-08-25

申请号：US13064914

申请日：2011-04-26

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

公开(公告)号：US20070161140A1

公开(公告)日：2007-07-12

申请号：US11651542

申请日：2007-01-10

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

公开(公告)号：US06504282B2

公开(公告)日：2003-01-07

申请号：US09843367

申请日：2001-04-25

申请人： Won-Jeong Lee

发明人： Won-Jeong Lee

IPC分类号： H02K100

CPC分类号： H02K3/345 ,  H02K1/265

摘要： The present invention relates to an armature core of a start motor in which in which the depth of a slop in which an insulation member installed in a core is overlapped is deeper than other insulation members by 1.5 through 2.5 times compared to the thickness of an insulation member, and the width of the slot is the same as that of the other slots. There is provided an armature core of a start motor in which a width “a” of the insulation overlapping slot and a width “b” of other slot are same, and a depth “A” of the overlapping slot is 1.5 through 2.5 times of a thickness of the insulation member compared to a depth “B” of the slot, and a groove is formed at an entrance portion of the slot in a structure that a front end and rear end of an insulation member are overlapped and inserted in an armature core of a start motor, and one insulation member overlapping slot and a plurality of slots each having a certain width and depth are radially formed.

摘要翻译： 本发明涉及一种起动电动机的电枢铁心，其中安装在铁心中的绝缘件重叠的斜面的深度比绝缘件的厚度比其它绝缘件深1.5-2.5倍 并且槽的宽度与其他槽的宽度相同。 提供了一种起动电动机的电枢铁芯，其中绝缘重叠槽的宽度“a”和其它槽的宽度“b”相同，并且重叠槽的深度“A”是1.5至2.5倍 绝缘构件的厚度与槽的深度“B”相比较，并且在槽的入口部分处形成有凹槽，其结构使得绝缘构件的前端和后端重叠并插入到电枢中 径向地形成起动电动机的铁心和一个绝缘构件重叠槽和各自具有一定宽度和深度的多个槽。

公开(公告)号：US06479944B2

公开(公告)日：2002-11-12

申请号：US09910759

申请日：2001-07-24

申请人： Mi Kyoung Lee ,  Jun Yong Im ,  Won Jeong Lee ,  Nam Yeol Yang

发明人： Mi Kyoung Lee ,  Jun Yong Im ,  Won Jeong Lee ,  Nam Yeol Yang

IPC分类号： G09G310

CPC分类号： H01J9/38 ,  H01J9/40 ,  H01J2217/49

摘要： Disclosed are a plasma display panel, apparatus for fabricating the same, and fabrication process thereof enabling to reduce the time for a product process and prevent panel characteristic reduction and panel damage by preventing the generation of impurity gas and achieving the plates-combination at a room temperature. The present invention includes a passivation layer formation means, a substrate transfer means, a cleaning means, a sealing material coating means, and a discharge gas injection/combination means. The present invention is constructed so as to be isolated from the atmosphere. The constructions of the fabrication process and PDP enables the normal temperature combination/attachment so as to increase product efficiency by reducing a process time and improve product quality by preventing the panel characteristic reduction.

摘要翻译： 公开了一种等离子体显示面板及其制造方法及其制造方法，其能够减少产品处理的时间，并且通过防止杂质气体的产生和在室内实现板组合来防止面板特性降低和面板损坏 温度。 本发明包括钝化层形成装置，衬底转移装置，清洁装置，密封材料涂覆装置和放电气体注入/组合装置。 本发明构造成与大气隔离。 制造工艺和PDP的结构使得能够进行常温组合/附接，从而通过减少处理时间并通过防止面板特性降低来提高产品质量来提高产品效率。