公开(公告)号：US20070287238A1

公开(公告)日：2007-12-13

申请号：US11889471

申请日：2007-08-14

申请人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xlaoxin Zhang

发明人： Hans Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xlaoxin Zhang

IPC分类号： H01L21/336 ,  B32B17/02

CPC分类号： H01L29/78654 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/938 ,  Y10T428/26

摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 具有其中在衬底上形成具有细线宽度的硅纳米线膜的结构的硅纳米线衬底，其制造方法以及使用其制造薄膜晶体管的方法。 制造硅纳米线基板的方法包括：准备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图形化成带状，减小线宽 通过对绝缘膜的至少一个侧面进行底切蚀刻来绝缘膜，并且通过使硅膜熔化和结晶，在绝缘膜的上表面上形成自对准硅纳米线膜。