公开(公告)号：US08643836B1

公开(公告)日：2014-02-04

申请号：US13599479

申请日：2012-08-30

Applicant: Hsin-Yi Tsai ,  Kuo-Cheng Huang ,  Ya-Cheng Liu ,  Min-Wei Hung

Inventor： Hsin-Yi Tsai ,  Kuo-Cheng Huang ,  Ya-Cheng Liu ,  Min-Wei Hung

IPC: G01N21/00

CPC classification number: G01N21/47 ,  G01N21/9501

Abstract: The present invention provides an inspection method for inspecting defects of wafer surface. The method includes: encircling peripheral region of the wafer surface by a first light source set and a second light source set; using a control module to control the first light source set and the second light source set to irradiate the light alternately from different directions; using an image pick-up module to receive a scattered light image during each time when the first light source set or the second light source set irradiates the light on the wafer surface; and then using a process module to obtain an enhanced and clear defect image of wafer surface by processing each of the scattered light images.

Abstract translation: 本发明提供了一种用于检查晶片表面缺陷的检查方法。 该方法包括：通过第一光源组和第二光源组环绕晶片表面的周边区域; 使用控制模块来控制第一光源组和第二光源组，以从不同方向交替地照射光; 使用图像拾取模块在第一光源组或第二光源组照射晶片表面上的光的每个时间期间接收散射光图像; 然后使用处理模块通过处理每个散射光图像来获得晶片表面的增强和清晰的缺陷图像。