Semiconductor laser device having an insulation region
    1.
    发明授权
    Semiconductor laser device having an insulation region 失效
    具有绝缘区域的半导体激光器件

    公开(公告)号:US07602831B2

    公开(公告)日:2009-10-13

    申请号:US11453100

    申请日:2006-06-15

    IPC分类号: H01S3/098 H01S5/00 H01S3/14

    摘要: A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

    摘要翻译: 一种半导体激光器件,包括具有第一表面和与第一表面相对的第二表面的基板,形成在基板的第二表面上的有源区,形成在有源区上的包覆层,以及形成在该包层中的绝缘区 以在基板的第二表面上形成具有第一尺寸的第一激光区域和具有不同于第一尺寸的第二尺寸的第二激光区域。 第一激光区域用于产生具有第一激光模式通道空间的第一光谱。 第二激光区域用于产生具有第二激光模式通道空间的第二光谱。 第一光谱和第二光谱的组合形成单模激光。 没有任何光栅,半导体激光器件易于制造并且制造成本低。

    Semiconductor laser device having an insulation region

    公开(公告)号:US20060285570A1

    公开(公告)日:2006-12-21

    申请号:US11453100

    申请日:2006-06-15

    IPC分类号: H01S3/098 H01S5/00 H01S3/14

    摘要: A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.