Abstract:
A monolithic integrated multi-segment cascade optical frequency comb and its chip are disclosed, which belongs to the technical field of sensing detection, quantum information and optical communication technology. The optical frequency comb includes a first semiconductor passive mode-locking laser, a semiconductor optical amplifier, and a second semiconductor passive mode-locking laser sequentially integrated and connected; the first semiconductor passive mode-locking laser includes a first reverse bias absorption area integrated with an optogalvanic distribution grating and a first gain cavity length extender (coupled multi-ring or multi-disk); the second semiconductor passive mode-locking laser includes a second reverse bias absorption area and a second gain cavity length extender (coupled multi-ring or multi-disk); each structure is connected to each other by electrical isolation grooves. Through the above structure, the present disclosure realizes an optical frequency comb with small size, high efficiency, tunable, fundamental mode, high power, narrow pulse width, wide spectrum and flexible controllability.
Abstract:
An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.
Abstract:
A laser source for emitting radiation in a given emission spectral band, centered on a given emission angular frequency, the central emission angular frequency is provided. The laser source comprises a laser cavity comprising a gain section having a known frequency dependent Group Delay Dispersion, and a GTI mirror arranged at one end of the gain section, having a known frequency dependent Group Delay Dispersion. The gain section and the GTI mirror are formed into a same laser medium, the laser medium having a known frequency dependent Group Delay Dispersion, and the gain section and the GTI mirror are separated by a gap of predetermined width filled with a dielectric medium thus forming a two parts laser cavity. Further, the GTI GDD at least partly compensates the sum of the Gain GDD and the material GDD in the emission spectral band.
Abstract:
Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity. High-order lateral optical modes in the aperture region exhibit larger leakage losses than the fundamental lateral optical mode due to the resonant interaction with the continuum of modes outside the aperture, enabling single-mode lasing from a broad aperture vertical cavity surface emitting laser.
Abstract:
A 3×3 multi-mode interference coupling device having a length L and a width W, a center input port between a pair of outer input ports, where each outer input port is displaced from the center input port by a distance W/3, and a center output port between a pair of outer output ports, where each outer output port is displaced from the center output port by a distance W/3, where the device is supports Cbar, Ccen, and a Cx coupling coefficients therein, when the outer input ports are equally excited with an input signal having a 180° phase difference, Ccen from each outer input port destructively interferes when the propagation length L is an integer number of Lπ/2, where the device outputs equal intensity laser modes from each outer output port when the propagation length is an integer multiple of Lπ/2.
Abstract:
A light emitting apparatus includes: a semiconductor layer including a light emitting region that generates modulation light modulated with a first signal, and a feedback region that is configured so that a feedback mode to feed back a part of light generated in the light emitting region to the light emitting region and a monitor mode to monitor a light amount of the light generated in the light emitting region are switchable; and a controller, wherein when the modulation light is generated in the light emitting region, the controller sets the feedback region to the feedback mode, and the controller switches the feedback region to the monitor mode during at least a part of a period in which there is no first signal.
Abstract:
Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.
Abstract:
A 3×3 multi-mode interference coupling device having a length L and a width W, a center input port between a pair of outer input ports, where each outer input port is displaced from the center input port by a distance W/3, and a center output port between a pair of outer output ports, where each outer output port is displaced from the center output port by a distance W/3, where the device is supports Cbar, Ccen, and a Cx coupling coefficients therein, when the outer input ports are equally excited with an input signal having a 180° phase difference, Ccen from each outer input port destructively interferes when the propagation length L is an integer number of Lπ/2, where the device outputs equal intensity laser modes from each outer output port when the propagation length is an integer multiple of Lπ/2.
Abstract:
An edge emitting laser light source and a three-dimensional (3D) image obtaining apparatus including the edge emitting laser light source are provided. The edge emitting laser light source includes a substrate; an active layer disposed on the substrate; a wavelength selection section comprising grating regions configured to select wavelengths of light emitted from the active layer; and a gain section configured to resonate the light having the selected wavelengths in a direction parallel with the active layer.
Abstract:
A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.