公开(公告)号：US06221792B1

公开(公告)日：2001-04-24

申请号：US08881710

申请日：1997-06-24

申请人： Yun-Yen Jack Yang ,  Ching-Hwa Chen ,  Yea-Jer Arthur Chen

发明人： Yun-Yen Jack Yang ,  Ching-Hwa Chen ,  Yea-Jer Arthur Chen

IPC分类号： H01L2144

CPC分类号： H01L21/76856 ,  H01L21/76843

摘要： A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.

摘要翻译： 描述了在衬底上形成阻挡层的氮化工艺。 氮化工艺包括在衬底的表面上沉积金属或金属硅化物层，将衬底放置在高密度，低压等离子体反应器中，将包含氮气的气体引入高密度低压等离子体反应器中， 在高密度低压等离子体反应器中，在促进至少一部分金属或金属硅化物层的氮化的条件下，分别产生金属氮化物或金属氮化硅的组合物。