公开(公告)号：US07094669B2

公开(公告)日：2006-08-22

申请号：US10910499

申请日：2004-08-03

申请人： Xiaomei Bu ,  Alex See ,  Tae Jong Lee ,  Fan Zhang ,  Yeon Kheng Lim ,  Liang Choo Hsia

发明人： Xiaomei Bu ,  Alex See ,  Tae Jong Lee ,  Fan Zhang ,  Yeon Kheng Lim ,  Liang Choo Hsia

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301 ,  H01L21/76 ,  H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.