公开(公告)号：US20090053891A1

公开(公告)日：2009-02-26

申请号：US12196384

申请日：2008-08-22

Applicant: Yi-Chin Lin ,  Chia-Wei Hsu ,  Yeou-Bin Lin ,  Yi-Tsung Jan ,  Sung-Min Wei ,  Chin-Cherng Liao ,  Pi-Xuang Chuang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

Inventor： Yi-Chin Lin ,  Chia-Wei Hsu ,  Yeou-Bin Lin ,  Yi-Tsung Jan ,  Sung-Min Wei ,  Chin-Cherng Liao ,  Pi-Xuang Chuang ,  Shih-Ming Chen ,  Hsiao-Ying Yang

IPC: H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device for preventing a poisoned via is provided. A substrate with a conductive layer formed thereon is provided. A composite layer is formed over the substrate and the conductive layer, wherein the composite layer comprises a dielectric layer and a spin-on-glass layer. A via hole is formed through the composite layer, wherein the via hole exposes a surface of the conductive layer. A protection layer is formed on a sidewall of the via hole so as to prevent out-gassing from the spin-on-glass layer. A barrier layer is formed on the protection layer and the conductive layer within the via hole. And a metal layer is deposited on the barrier layer within the via hole to fill the via hole.

Abstract translation: 提供一种用于制造用于防止中毒的通孔的半导体器件的方法。 提供其上形成有导电层的基板。 在衬底和导电层上形成复合层，其中复合层包括电介质层和旋涂玻璃层。 通过复合层形成通孔，其中通孔露出导电层的表面。 在通孔的侧壁上形成保护层，以防止旋涂玻璃层的排气。 阻挡层形成在保护层和通孔内的导电层上。 并且在通孔内的阻挡层上沉积金属层以填充通孔。