Abstract:
A server chassis having a low-profile characteristic is disclosed to include a chassis shell, which defines an accommodation chamber that accommodates an electronic device and a motherboard, a fan module located on one open side of the accommodation chamber in the chassis shell and defining a mounting space in the accommodation chamber, and a connector module, which includes a housing movable in and out of the mounting space inside the chassis shell and locked to the chassis shell with screws, a plurality of peripheral apparatuses carried in the housing of the connector module and an adapter board mounted on the rear side of the housing for the connection of the electronic device, the electric fans and the peripheral apparatuses.
Abstract:
A method for treating fluoride-containing waste water is disclosed. The method includes, first, inducing fluoride-containing waste water and calcium compound into a crystallization reaction tank having a plurality of crystallizing webs so as to conduct a reaction between the fluoride-containing waste water and the calcium compound to form calcium fluoride crystals on the crystallizing webs; meanwhile, stirring the fluoride-containing waste water and the; then, discharging the fluoride-containing waste water out of the crystallization reaction tank for conducting a successive treating step.
Abstract:
A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.
Abstract:
A decorative board includes two transparent surface layers spaced from each other, a transparent intermediate layer mounted between the surface layers, and a plurality of decorative members located in the intermediate layer. Thus, the surface layers and the intermediate layer are made of transparent material to expose the decorative members so that the decorative members are exposed from the two surface layers and the intermediate layer to enhance the aesthetic quality of the decorative board. In addition, the decorative members are encompassed by and hidden in the intermediate layer completely and are sandwiched between the two surface layers, so that the decorative members will not protrude outwardly from the two surface layers to facilitate a user clearing the decorative board.
Abstract:
A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.