公开(公告)号：US5585167A

公开(公告)日：1996-12-17

申请号：US52966

申请日：1993-04-27

申请人： Toshifumi Satoh ,  Hideaki Adachi ,  Yo Ichikakwa ,  Kentaro Setsune

发明人： Toshifumi Satoh ,  Hideaki Adachi ,  Yo Ichikakwa ,  Kentaro Setsune

IPC分类号： C30B23/02 ,  H01B1/08 ,  H01L39/00

CPC分类号： H01B1/08 ,  C30B23/02 ,  C30B29/22 ,  Y10T428/24975 ,  Y10T428/265

摘要： A thin-film conductor is made of (Sr.sub.1-y Ca.sub.y).sub.1-x CuO.sub.z, wherein 0.ltoreq.x.ltoreq.0.1 and 0.ltoreq.y.ltoreq.0.5, and z is approximately equal to or smaller than 2. In a method of fabricating the thin-film conductor, it is preferably to heat a substrate. A first atomic layer of metal including Sr or including Sr and Ca is formed on the heated substrate. A second atomic layer of oxide containing Cu is formed on the first atomic layer. A first atomic layer of metal including Sr or including Sr and Ca is formed on the second atomic layer. These steps are repeated to form a lamination of an alternation of the first atomic layers and the second atomic layers on the substrate.

摘要翻译： 薄膜导体由（Sr1-yCay）1-xCuOz制成，其中0≤x≤0.1且0≤y≤0.5，z约等于或小于2。 制造薄膜导体的方法，优选加热基底。 在加热的衬底上形成包括Sr或包括Sr和Ca的金属的第一原子层。 在第一原子层上形成含有Cu的氧化物的第二原子层。 包含Sr或包含Sr和Ca的金属的第一原子层形成在第二原子层上。 重复这些步骤以形成基板上的第一原子层和第二原子层的交替的叠层。