公开(公告)号：US12098458B2

公开(公告)日：2024-09-24

申请号：US17730516

申请日：2022-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masashi Tsubuku

IPC: H01L27/12 ,  C23C14/08 ,  C23C14/34 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01L29/04 ,  H01L29/786

CPC classification number: C23C14/08 ,  C23C14/34 ,  C23C14/3414 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.

公开(公告)号：US20240266531A1

公开(公告)日：2024-08-08

申请号：US18622359

申请日：2024-03-29

Applicant: NINGDE AMPEREX TECHNOLOGY LIMITED

Inventor： Shiyang Cheng ,  Jumpei Shitaba ,  Ye Lang ,  Leimin Xu

IPC: H01M4/525 ,  C30B29/22 ,  H01M4/02 ,  H01M4/36

CPC classification number: H01M4/525 ,  C30B29/22 ,  H01M4/364 ,  H01M2004/021 ,  H01M2004/028

Abstract: A positive electrode material includes first monocrystalline particles, and the first monocrystalline particle has a first length-diameter ratio L1, where L1 satisfies 2≤L1≤5. The positive electrode material includes the first monocrystalline particle having the first length-diameter ratio L1, and a high length-diameter ratio of the first monocrystalline particle is conducive to reducing active crystal planes which cause side reactions on a surface of the positive electrode material, and suppressing structural phase change and interface side reactions of the positive electrode material, which leads to improved cycling performance and storage performance of the electrochemical apparatus at high voltage and high temperature.

公开(公告)号：US11945729B2

公开(公告)日：2024-04-02

申请号：US17457505

申请日：2021-12-03

Applicant: NICHIA CORPORATION

Inventor： Hideki Yoshida ,  Masato Sonoo ,  Takahiro Kitagawa

IPC: C01G53/04 ,  C01G45/12 ,  C01G51/00 ,  C01G51/04 ,  C01G53/00 ,  C30B1/10 ,  C30B7/14 ,  C30B29/10 ,  C30B29/22 ,  C30B29/68 ,  H01M4/505 ,  H01M4/525 ,  H01M4/04 ,  H01M4/133 ,  H01M4/1391 ,  H01M10/0525

CPC classification number: C01G53/04 ,  C01G45/1221 ,  C01G51/006 ,  C01G51/04 ,  C01G51/42 ,  C01G53/006 ,  C01G53/42 ,  C01G53/50 ,  C30B1/10 ,  C30B7/14 ,  C30B29/10 ,  C30B29/22 ,  C30B29/68 ,  H01M4/505 ,  H01M4/525 ,  C01P2002/54 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/20 ,  C01P2004/50 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/40 ,  H01M4/0435 ,  H01M4/133 ,  H01M4/1391 ,  H01M10/0525

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

公开(公告)号：US11877514B2

公开(公告)日：2024-01-16

申请号：US17042657

申请日：2019-03-26

Applicant: Soitec

Inventor： Bruno Ghyselen

IPC: C30B33/06 ,  H10N30/079 ,  C30B25/18 ,  C30B29/22 ,  H10N30/853 ,  H10N30/00

CPC classification number: H10N30/079 ,  C30B25/183 ,  C30B29/22 ,  C30B33/06 ,  H10N30/10516 ,  H10N30/8554

Abstract: A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.

公开(公告)号：US11827998B2

公开(公告)日：2023-11-28

申请号：US17330922

申请日：2021-05-26

Applicant: Worcester Polytechnic Institute

Inventor： Yan Wang ,  Xiaotu Ma ,  Eric Gratz ,  Jinzhao Fu ,  Panawan Vanaphuti

IPC: C30B1/02 ,  C30B1/12 ,  C30B29/22 ,  H01M4/525 ,  H01M10/54 ,  H01M4/505 ,  H01M4/02

CPC classification number: C30B1/02 ,  C30B1/12 ,  C30B29/22 ,  H01M4/505 ,  H01M4/525 ,  H01M10/54 ,  H01M2004/028

Abstract: A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

公开(公告)号：US20230295834A1

公开(公告)日：2023-09-21

申请号：US18321747

申请日：2023-05-22

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu WANG ,  Weiming GUAN ,  Zhenxing LIANG ,  Min LI

IPC: C30B15/02 ,  C30B15/22 ,  C30B29/22 ,  C30B15/10 ,  C30B15/14

CPC classification number: C30B15/02 ,  C30B15/22 ,  C30B29/22 ,  C30B15/10 ,  C30B15/14 ,  C30B29/28

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

公开(公告)号：US10017874B2

公开(公告)日：2018-07-10

申请号：US13690263

申请日：2012-11-30

Applicant: YOUTEC CO., LTD. ,  SAE Magnetics (H.K.) Ltd.

Inventor： Takeshi Kijima ,  Yuuji Honda ,  Daisuke Iitsuka ,  Kenjirou Hata

IPC: C30B1/02 ,  C30B23/08 ,  C30B29/22 ,  C30B29/68 ,  C30B7/06 ,  C30B23/02 ,  H01L41/318 ,  H01L41/319

CPC classification number: C30B1/023 ,  C30B7/06 ,  C30B23/02 ,  C30B23/08 ,  C30B29/22 ,  C30B29/68 ,  H01L41/318 ,  H01L41/319 ,  Y10T117/10

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

公开(公告)号：US09983166B2

公开(公告)日：2018-05-29

申请号：US14943740

申请日：2015-11-17

Applicant: JAPAN FINE CERAMICS CENTER ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Taro Ueda ,  Hajime Okawa ,  Masaya Suzuki ,  Takafumi Ogawa ,  Seiji Takahashi ,  Toyoharu Kaneko ,  Keiichiro Aoki

IPC: G01N27/407 ,  G01N27/41 ,  G01N33/00 ,  C30B29/22 ,  C30B7/06

CPC classification number: G01N27/4075 ,  C30B7/06 ,  C30B29/22 ,  G01N27/41 ,  G01N33/0037 ,  Y02A50/245

Abstract: The present specification provides a NOx responsive element suitable for directly sensing NOx. The NOx responsive element an oxygen ion conductive layer has a first electrode layer having a nitrogen oxide decomposition catalyst phase composed of perovskite-type oxide, being in contact with the oxygen ion conductive layer, and being exposed to NOx, and a second electrode layer opposing the first electrode layer across the oxygen ion conductive layer. The nitrogen oxide decomposition catalyst phase has a nitrogen oxide adsorption stabilizing surface on its surface exposed to nitrogen oxide.

公开(公告)号：US09909233B1

公开(公告)日：2018-03-06

申请号：US15711122

申请日：2017-09-21

Applicant: National Technology & Engineering Solutions of Sandia, LLC

Inventor： Jon F. Ihlefeld ,  Michael B. Sinclair ,  Thomas E. Beechem, III

IPC: H01L37/00 ,  C30B29/32 ,  C30B29/24 ,  C09K13/00 ,  B24B37/04

CPC classification number: C30B29/32 ,  B24B37/042 ,  C09K13/00 ,  C30B1/02 ,  C30B29/22 ,  C30B29/24 ,  C30B29/30

Abstract: The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

公开(公告)号：US09873948B2

公开(公告)日：2018-01-23

申请号：US14824167

申请日：2015-08-12

Applicant: YOUTEC CO., LTD.

Inventor： Takeshi Kijima

IPC: B23B19/00 ,  C23C28/04 ,  H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  H01L41/318 ,  H01L41/319 ,  C23C14/02 ,  C23C14/08 ,  C23C14/58 ,  H01L41/047

CPC classification number: C23C28/042 ,  C23C14/025 ,  C23C14/088 ,  C23C14/5853 ,  C30B28/12 ,  C30B29/22 ,  C30B33/02 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/318 ,  H01L41/319

Abstract: To enhance piezoelectric property. One aspect of the present invention is ferroelectric ceramics including a Pb(Zr1-xTix)O3 film, wherein: the x satisfies the following formula 1, the Pb(Zr1-xTix)O3 film has a plurality of columnar single crystals, the x axis, the y axis and the z axis of each of the plurality of columnar single crystals are oriented in the same direction, respectively, 0