公开(公告)号：US06272059B1

公开(公告)日：2001-08-07

申请号：US09468786

申请日：1999-12-21

申请人： Douk Hyoun Ryu ,  Yong Ho Seol

发明人： Douk Hyoun Ryu ,  Yong Ho Seol

IPC分类号： G11C700

CPC分类号： G11C7/065 ,  G11C7/12

摘要： A bit line sense-amplifier for a semiconductor memory device and a method for driving the same do not apply a bit line precharge voltage by a switch in an equalization operation, perform an equalization operation by interconnecting a plurality of sense-amplifier lines, then perform a precharge operation by applying a bit line precharge voltage through NMOS transistor of the switch, increase a sensing speed by reducing a loading of a sense-amplifier, reduce a transient current, and minimize a power-consumption by performing a precharge operation after a bit line equalization.

摘要翻译： 用于半导体存储器件的位线读出放大器及其驱动方法在均衡操作中不通过开关施加位线预充电电压，通过互连多个读出放大器线执行均衡操作，然后执行 通过施加开关的NMOS晶体管的位线预充电电压进行预充电操作，通过减小感测放大器的负载来降低感测速度，减少瞬态电流，并且通过在一位之后执行预充电操作来最小化功耗 线均衡。