公开(公告)号：US20090078564A1

公开(公告)日：2009-03-26

申请号：US12208557

申请日：2008-09-11

申请人： Keiji Ishibashi ,  Yoshiaki Daigo

发明人： Keiji Ishibashi ,  Yoshiaki Daigo

IPC分类号： C23C14/00

CPC分类号： C23C14/3407 ,  C23C14/165

摘要： A target structure is provided which enables sputtering of gallium or gallium-containing material in a molten state to be achieved even when the film deposition rate is increased by increasing the input electric power. A sputtering apparatus including such a target structure is also provided. The target structure includes: a holding section formed from a metal material; and gallium or gallium-containing material placed on the holding section, wherein a surface of the holding section which forms an interface with the gallium or gallium-containing material is formed thereon with a thin film having an angle of contact of not more than 30° to the gallium or gallium-containing material in a molten state. The sputtering apparatus includes this target structure.

摘要翻译： 提供了一种目标结构，即使当通过增加输入电力来提高成膜速率时，也能够实现熔融状态下的镓或镓的材料的溅射。 还提供了包括这种靶结构的溅射装置。 目标结构包括：由金属材料形成的保持部; 放置在保持部上的含镓或镓的材料，其中与含镓或镓的材料形成界面的保持部的表面上形成有接触角不大于30°的薄膜 在熔融状态下与镓或镓的材料接触。 溅射装置包括该目标结构。