公开(公告)号：US5882807A

公开(公告)日：1999-03-16

申请号：US770239

申请日：1996-12-20

申请人： Yoshio Funato ,  Koji Furukawa ,  Hisao Yamamoto ,  Nobuo Kageyama

发明人： Yoshio Funato ,  Koji Furukawa ,  Hisao Yamamoto ,  Nobuo Kageyama

IPC分类号： C04B41/52 ,  C04B41/89 ,  C23C16/32 ,  H01L21/00 ,  C04B35/56

CPC分类号： H01L21/67115 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C16/325 ,  C04B2111/0025 ,  Y10T428/265

摘要： A jig used for heat treatment made from an SiC-coated silicon carbide material, wherein the SiC film is coated by the CVD method on a silicon carbide matrix in which silicon has been impregnated and wherein there are no pores with a diameter of 2 .mu.m or larger in the outer layer of the matrix within 200 .mu.m from the interface of the SiC film and the silicon carbide matrix when observed by a scanning electron microscope at a magnification of 400 times. The jig is manufactured by producing an SiC film on the surface of a silicon carbide matrix in which silicon has been impregnated by introducing a raw material compound for producing the SiC film and forming the SiC film at a temperature from 1000.degree. C. to 1290.degree. C. under a pressure from 500 to 760 Torr in a non-oxidative atmosphere. The jig exhibits superior resistance to high temperature heating cycles and excellent high thermal shock resistance required for heat treatment in semiconductor manufacturing.

摘要翻译： 用于由SiC涂覆的碳化硅材料制成的热处理的夹具，其中通过CVD方法将SiC膜涂覆在已经浸渍了硅的碳化硅基体上，并且其中没有直径为2μm的孔 或者当通过扫描电子显微镜以400倍的倍数观察时，从SiC膜和碳化硅基体的界面在200μm以内的基体的外层中，或者更大。 通过在碳化硅基体的表面上制造SiC膜来制造夹具，其中通过引入用于制造SiC膜的原料化合物并在1000℃至1290℃的温度下形成SiC膜来浸渍硅。 在非氧化性气氛下，在500至760托的压力下。 夹具具有优异的耐高温加热循环性能以及半导体制造中热处理所需的优异的耐热冲击性。