公开(公告)号：US20110220896A1

公开(公告)日：2011-09-15

申请号：US12891855

申请日：2010-09-28

申请人： Tatsuya MIYAKAWA ,  Youkio Kashio

发明人： Tatsuya MIYAKAWA ,  Youkio Kashio

IPC分类号： H01L33/08 ,  H01L29/786 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  G02F2001/136218 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/78648

摘要： An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.

摘要翻译： 在BL绝缘膜和晶体管的BL绝缘膜之间设置电场阻挡膜，并且阻挡膜包括这三层。 电场阻挡膜阻挡由漏电极，源电极和n + -Si膜产生的电场。 即使各驱动晶体管中的漏电极，源电极和n + -Si膜的偏移发生变化，使i-Si膜覆盖的部分变大，因此，该部分的电场被电场 阻挡膜，从而使特性变化更小。