STACKED CHIP DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    STACKED CHIP DEVICE AND MANUFACTURING METHOD THEREOF 有权
    堆叠芯片设备及其制造方法

    公开(公告)号:US20120320496A1

    公开(公告)日:2012-12-20

    申请号:US13494544

    申请日:2012-06-12

    IPC分类号: H01G4/12

    CPC分类号: H01G4/30 H01G4/005 H01G4/12

    摘要: Disclosed herein are a stacked chip device including: a stacked body in which a plurality of sheets having an internal electrode made of a conductive material are stacked; external electrodes provided at both sides of the stacked body; and connection electrodes extending from the internal electrode and electrically connecting the internal electrode with the external electrodes, wherein the connection electrodes include: a plating solution permeation preventing section extending from the internal electrode, however, extending with a thickness smaller than the thickness of the internal electrode; and a contact reinforcement section extending from the plating solution permeation preventing section, however, extending in the form in which the thickness thereof is gradually extended toward the external electrode, and a manufacturing method thereof.

    摘要翻译: 这里公开了一种堆叠式芯片装置,包括:层叠体,其中堆叠具有由导电材料制成的内部电极的多个片材; 设置在层叠体的两侧的外部电极; 以及从内部电极延伸并将内部电极与外部电极电连接的连接电极,其中,连接电极包括:从内部电极延伸的电镀液渗透防止部,其厚度比内部电极的厚度 电极; 以及从电镀液渗透防止部延伸的接触加强部,其厚度以其厚度逐渐向外部电极延伸的形态及其制造方法延伸。

    Stacked chip device and manufacturing method thereof
    2.
    发明授权
    Stacked chip device and manufacturing method thereof 有权
    堆叠芯片器件及其制造方法

    公开(公告)号:US08675342B2

    公开(公告)日:2014-03-18

    申请号:US13494544

    申请日:2012-06-12

    IPC分类号: H01G4/06

    CPC分类号: H01G4/30 H01G4/005 H01G4/12

    摘要: Disclosed herein are a stacked chip device including: a stacked body in which a plurality of sheets having an internal electrode made of a conductive material are stacked; external electrodes provided at both sides of the stacked body; and connection electrodes extending from the internal electrode and electrically connecting the internal electrode with the external electrodes, wherein the connection electrodes include: a plating solution permeation preventing section extending from the internal electrode, however, extending with a thickness smaller than the thickness of the internal electrode; and a contact reinforcement section extending from the plating solution permeation preventing section, however, extending in the form in which the thickness thereof is gradually extended toward the external electrode, and a manufacturing method thereof.

    摘要翻译: 这里公开了一种堆叠式芯片装置,包括:层叠体,其中堆叠具有由导电材料制成的内部电极的多个片材; 设置在层叠体的两侧的外部电极; 以及从内部电极延伸并将内部电极与外部电极电连接的连接电极,其中,连接电极包括:从内部电极延伸的电镀液渗透防止部,其厚度比内部电极的厚度 电极; 以及从电镀液渗透防止部延伸的接触加强部,其厚度以其厚度逐渐向外部电极延伸的形态及其制造方法延伸。