-
公开(公告)号:US20120320496A1
公开(公告)日:2012-12-20
申请号:US13494544
申请日:2012-06-12
申请人: Jong Beom Shin , Hyun Woo Kim , Doo Young Kim , Hyung Kyu Shim , Hyun Kyu Im , Youn Sik Jin , Dong Gun Kim
发明人: Jong Beom Shin , Hyun Woo Kim , Doo Young Kim , Hyung Kyu Shim , Hyun Kyu Im , Youn Sik Jin , Dong Gun Kim
IPC分类号: H01G4/12
摘要: Disclosed herein are a stacked chip device including: a stacked body in which a plurality of sheets having an internal electrode made of a conductive material are stacked; external electrodes provided at both sides of the stacked body; and connection electrodes extending from the internal electrode and electrically connecting the internal electrode with the external electrodes, wherein the connection electrodes include: a plating solution permeation preventing section extending from the internal electrode, however, extending with a thickness smaller than the thickness of the internal electrode; and a contact reinforcement section extending from the plating solution permeation preventing section, however, extending in the form in which the thickness thereof is gradually extended toward the external electrode, and a manufacturing method thereof.
摘要翻译: 这里公开了一种堆叠式芯片装置,包括:层叠体,其中堆叠具有由导电材料制成的内部电极的多个片材; 设置在层叠体的两侧的外部电极; 以及从内部电极延伸并将内部电极与外部电极电连接的连接电极,其中,连接电极包括:从内部电极延伸的电镀液渗透防止部,其厚度比内部电极的厚度 电极; 以及从电镀液渗透防止部延伸的接触加强部,其厚度以其厚度逐渐向外部电极延伸的形态及其制造方法延伸。
-
公开(公告)号:US08675342B2
公开(公告)日:2014-03-18
申请号:US13494544
申请日:2012-06-12
申请人: Jong Beom Shin , Hyun Woo Kim , Doo Young Kim , Hyung Kyu Shim , Hyun Kyu Im , Youn Sik Jin , Dong Gun Kim
发明人: Jong Beom Shin , Hyun Woo Kim , Doo Young Kim , Hyung Kyu Shim , Hyun Kyu Im , Youn Sik Jin , Dong Gun Kim
IPC分类号: H01G4/06
摘要: Disclosed herein are a stacked chip device including: a stacked body in which a plurality of sheets having an internal electrode made of a conductive material are stacked; external electrodes provided at both sides of the stacked body; and connection electrodes extending from the internal electrode and electrically connecting the internal electrode with the external electrodes, wherein the connection electrodes include: a plating solution permeation preventing section extending from the internal electrode, however, extending with a thickness smaller than the thickness of the internal electrode; and a contact reinforcement section extending from the plating solution permeation preventing section, however, extending in the form in which the thickness thereof is gradually extended toward the external electrode, and a manufacturing method thereof.
摘要翻译: 这里公开了一种堆叠式芯片装置,包括:层叠体,其中堆叠具有由导电材料制成的内部电极的多个片材; 设置在层叠体的两侧的外部电极; 以及从内部电极延伸并将内部电极与外部电极电连接的连接电极,其中,连接电极包括:从内部电极延伸的电镀液渗透防止部,其厚度比内部电极的厚度 电极; 以及从电镀液渗透防止部延伸的接触加强部,其厚度以其厚度逐渐向外部电极延伸的形态及其制造方法延伸。
-