Semiconductor fabrication method suitable for MEMS
    1.
    发明授权
    Semiconductor fabrication method suitable for MEMS 有权
    适用于MEMS的半导体制造方法

    公开(公告)号:US08084361B2

    公开(公告)日:2011-12-27

    申请号:US11755437

    申请日:2007-05-30

    IPC分类号: H01L21/3213

    CPC分类号: B81C1/00634 B81B2201/052

    摘要: A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.

    摘要翻译: 一种方法包括在基底上方的第一区域中沉积牺牲材料层。 衬底的第一区域与衬底的第二区域分离,其中在第二区域上方设置耐腐蚀膜。 沉积耐腐蚀膜,使得耐腐蚀膜的第一部分在第一区域中的牺牲材料之上,并且耐腐蚀膜的第二部分高于第二区域。 通过化学机械抛光除去耐腐蚀膜的第一部分。 使用选择性蚀刻牺牲材料而不是耐腐蚀膜的蚀刻工艺从第一区域去除牺牲材料。

    SEMICONDUCTOR FABRICATION METHOD SUITABLE FOR MEMS
    2.
    发明申请
    SEMICONDUCTOR FABRICATION METHOD SUITABLE FOR MEMS 有权
    适用于MEMS的半导体制造方法

    公开(公告)号:US20080299769A1

    公开(公告)日:2008-12-04

    申请号:US11755437

    申请日:2007-05-30

    IPC分类号: H01L21/463

    CPC分类号: B81C1/00634 B81B2201/052

    摘要: A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.

    摘要翻译: 一种方法包括在基底上方的第一区域中沉积牺牲材料层。 衬底的第一区域与衬底的第二区域分离,其中在第二区域上方设置耐腐蚀膜。 沉积耐腐蚀膜,使得耐腐蚀膜的第一部分在第一区域中的牺牲材料之上,并且耐腐蚀膜的第二部分高于第二区域。 通过化学机械抛光除去耐腐蚀膜的第一部分。 使用选择性蚀刻牺牲材料而不是耐腐蚀膜的蚀刻工艺从第一区域去除牺牲材料。