Complex micromechanical part
    3.
    发明授权
    Complex micromechanical part 有权
    复杂微机械部件

    公开(公告)号:US09511990B2

    公开(公告)日:2016-12-06

    申请号:US13983682

    申请日:2012-01-05

    摘要: A method of fabricating a micromechanical part in a single-piece made of a synthetic carbon-allotrope includes forming a substrate which includes the negative cavity for the micromechanical part to be fabricated, coating the negative cavity of the substrate with a layer of the synthetic carbon allotrope in a thickness of between 0.2 μm and 20 μm, the thickness being less than the depth of the negative cavity, removing from the substrate a larger thickness than the thickness of the deposited layer, so as to leave a limited thickness of the layer of material in the negative cavity, and removing the substrate so as to release the single-piece micromechanical part formed in the negative cavity comprising an external surface of comparable roughness to that of the substrate.

    摘要翻译: 制造由合成碳 - 同素异形体制成的单件中的微机械部件的方法包括形成衬底,其包括用于要制造的微机械部件的负空腔,用合成碳层涂覆衬底的负空腔 同素异形体的厚度在0.2μm和20μm之间,其厚度小于负空腔的深度,从衬底移除比沉积层的厚度更大的厚度,以便留下有限厚度的层 在空腔中的材料,并且去除衬底以便释放形成在负空腔中的单件微机械部件,其包括与衬底相当的粗糙度的外表面。

    TWO-DIMENSIONAL OPTICAL DEFLECTOR INCLUDING TWO SOI STRUCTURES AND ITS MANUFACTURING METHOD
    4.
    发明申请
    TWO-DIMENSIONAL OPTICAL DEFLECTOR INCLUDING TWO SOI STRUCTURES AND ITS MANUFACTURING METHOD 有权
    包括两个SOI结构的二维光学偏转器及其制造方法

    公开(公告)号:US20150338644A1

    公开(公告)日:2015-11-26

    申请号:US14697211

    申请日:2015-04-27

    发明人: Yoshiaki YASUDA

    IPC分类号: G02B26/08 G02B7/182 B81C1/00

    摘要: A two-dimensional optical deflector includes a first SOI structure and a second SOI structure. A height of a monocrystalline silicon support layer of the first SOI structure is smaller than a height of a monocrystalline silicon support layer of the second SOI structure. A mirror includes a monocrystalline silicon active layer of the first SOI structure. An inner frame, an inner piezoelectric actuator and an outer frame include a monocrystalline silicon active layer of the first SOI structure and the monocrystalline silicon active layer of the second SOI structure. An outer piezoelectric actuator includes the monocrystalline silicon active layer of the first SOI structure.

    摘要翻译: 二维光偏转器包括第一SOI结构和第二SOI结构。 第一SOI结构的单晶硅支撑层的高度小于第二SOI结构的单晶硅支撑层的高度。 镜子包括第一SOI结构的单晶硅有源层。 内框架,内压电致动器和外框架包括第一SOI结构的单晶硅有源层和第二SOI结构的单晶硅有源层。 外部压电致动器包括第一SOI结构的单晶硅有源层。

    Method for treating the surface of an electrically conducting substrate surface
    6.
    发明授权
    Method for treating the surface of an electrically conducting substrate surface 有权
    用于处理导电基底表面的表面的方法

    公开(公告)号:US08758590B2

    公开(公告)日:2014-06-24

    申请号:US12295321

    申请日:2007-04-20

    IPC分类号: C25D17/00 C25D5/02 B23H3/00

    摘要: Disclosed is a method of treating the surface of an electrically conducting substrate surface wherein a tool comprising an ion-conducting solid material is brought into contact at least in some areas with the substrate surface. The tool conducts the metal ions of the substrate and an electric potential is applied so that an electrical potential gradient is applied between the substrate surface and the tool in such a manner that metal ions are drawn from the substrate surface or deposited onto the substrate surface by means of the tool.

    摘要翻译: 公开了一种处理导电衬底表面的方法,其中包括离子导电固体材料的工具至少在一些区域与衬底表面接触。 该工具传导衬底的金属离子并且施加电位,使得电位梯度以这样的方式施加在衬底表面和工具之间,使得金属离子从衬底表面被拉出或沉积到衬底表面上 手段的工具。

    COMPLEX MICROMECHANICAL PART
    7.
    发明申请
    COMPLEX MICROMECHANICAL PART 有权
    复合微生物部分

    公开(公告)号:US20140033848A1

    公开(公告)日:2014-02-06

    申请号:US13983682

    申请日:2012-01-05

    IPC分类号: B81B1/00 B81C1/00

    摘要: The invention relates to a micromechanical part (11, 21, 31, 41, 51, 61) made of a single-piece material. According to the invention, the part has an elementary section formed of at least two secant and non-aligned segments so that one of the at least two segments forms the height (e3) of the micromechanical part (11, 21, 31, 41, 51, 61), the height being greater than the thickness (e1) of each segment.The invention also concerns the method of fabricating the part.

    摘要翻译: 本发明涉及由单片材料制成的微机械部件(11,21,31,41,51,61)。 根据本发明,该部件具有由至少两个正割线段和非对准部分形成的基本部分,使得至少两个部分中的一个部分形成微机械部件(11,21,31,41,44)的高度(e3) 51,61),高度大于每个段的厚度(e1)。 本发明还涉及制造该部件的方法。

    Extruded structure with equilibrium shape
    9.
    发明授权
    Extruded structure with equilibrium shape 有权
    具有平衡形状的挤压结构

    公开(公告)号:US08557689B2

    公开(公告)日:2013-10-15

    申请号:US12952124

    申请日:2010-11-22

    IPC分类号: H01L21/00 B29C47/88

    摘要: An extrusion head is disposed over a substrate, and material is extruded through an oblique (e.g., semi-circular or tapered) outlet orifice of the extrusion head to form an associated extruded structure having an equilibrium shape that resists settling after being deposited on the substrate. The extrusion head includes fluidic channels having a flat surface formed by a flat first (e.g., metal) sheet, and an oblique (e.g., substantially semi-cylindrical) surface formed by elongated oblique trenches that are etched or otherwise formed in a second sheet. The fluidic channel communicates with the outlet orifice, which has a flat edge formed by the first sheet, and an oblique edge formed by an end of the oblique trench. The material is extruded through the outlet orifice such that its flat lower surface contacts the substrate, and its oblique upper surface faces away from the substrate. Two materials are co-extruded to form high aspect-ratio gridlines.

    摘要翻译: 挤出头设置在基材上方,并且材料通过挤出头的倾斜(例如,半圆形或锥形)出口孔挤出以形成相关联的挤出结构,其具有在沉积在基底上之后抵抗沉降的平衡形状 。 挤出头包括具有由平坦的第一(例如金属)片材形成的平坦表面的流体通道和由蚀刻或以其它方式形成在第二片材中的细长的倾斜沟槽形成的倾斜(例如,基本上为半圆柱形的)表面。 流体通道与具有由第一片形成的平坦边缘的出口孔和由倾斜沟槽的端部形成的倾斜边缘连通。 该材料通过出口孔挤出,使得其平坦的下表面接触基底,并且其斜上表面背离基底。 两种材料共挤出形成高纵横比网格线。

    Process and System for Fabrication of Patterns on a Surface
    10.
    发明申请
    Process and System for Fabrication of Patterns on a Surface 有权
    制作表面图案的工艺和系统

    公开(公告)号:US20110189446A1

    公开(公告)日:2011-08-04

    申请号:US13003484

    申请日:2009-07-03

    摘要: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    摘要翻译: 本发明提供了一种在碳基表面上构图结构的系统和工艺,包括将表面的一部分暴露于离子通量,使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现,通过控制离子暴露,顶表面上的表面结构的改变提供掩模图案,而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻,离开暴露区域相对于未曝光区域升高,从而将图案制造到表面上。 例如,Ga +聚焦离子束将图案暴露在金刚石表面上,其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。