公开(公告)号：US06864174B2

公开(公告)日：2005-03-08

申请号：US10394334

申请日：2003-03-20

申请人： Li-Te S. Lin ,  Yui Wang ,  Ming-Ching Chang ,  Li-Shung Chen ,  Huain-Jelin Lin ,  Yuan-Hong Chin ,  Hong-Yuan Tao

发明人： Li-Te S. Lin ,  Yui Wang ,  Ming-Ching Chang ,  Li-Shung Chen ,  Huain-Jelin Lin ,  Yuan-Hong Chin ,  Hong-Yuan Tao

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/302

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069 ,  H01L22/00

摘要： A method for compensating for CD variations across a semiconductor process wafer surface in a plasma etching process including providing a semiconductor wafer having a process surface including photolithographically developed features imaged from a photomask; determining a first dimensional variation of the features with respect to corresponding photomask dimensions along at least one wafer surface direction to determine a first levelness of the process surface; determining gas flow parameters in a plasma reactor for a plasma etching process required to approach a level process surface by reference to an archive of previous plasma etching process parameters carried out in the plasma reactor; carrying out the plasma etching process in the plasma rector according to the determined gas flow parameters; and, determining a second dimensional variation of the features along the at least one wafer surface direction to determine a second levelness of the process surface.

摘要翻译： 一种用于补偿等离子体蚀刻工艺中的半导体工艺晶片表面上的CD变化的方法，包括提供具有包括从光掩模成像的光刻显影特征的工艺表面的半导体晶片; 沿着至少一个晶片表面方向确定相对于相应光掩模尺寸的特征的第一尺寸变化，以确定所述工艺表面的第一平坦度; 确定等离子体反应器中的气体流量参数，用于通过参考在等离子体反应器中进行的先前等离子体蚀刻工艺参数的归档来等离子体蚀刻工艺所需的接近水平工艺表面; 根据确定的气体流量参数在等离子体检测器中进行等离子体蚀刻工艺; 以及确定所述特征沿所述至少一个晶片表面方向的第二维度变化以确定所述过程表面的第二平坦度。