公开(公告)号：US20130043594A1

公开(公告)日：2013-02-21

申请号：US13572553

申请日：2012-08-10

申请人： Yo Sasaki ,  Atsushi Yamamoto ,  Kazuya Kodani ,  Yuji Hisazato ,  Takashi Togasaki ,  Hideaki Kitazawa

发明人： Yo Sasaki ,  Atsushi Yamamoto ,  Kazuya Kodani ,  Yuji Hisazato ,  Takashi Togasaki ,  Hideaki Kitazawa

IPC分类号： H01L21/50 ,  H01L23/482

CPC分类号： C22C9/02 ,  C22C28/00 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/83825 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/00

摘要： According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

摘要翻译： 根据一个实施例，在安装基板和半导体芯片之间，存在包括选自Cu，Al，Ag，Ni，Cr，Zr和Ti的金属或其合金的接合支撑层，以及层压的熔融层 接合支撑层，并且由选自Sn，Zn和In的金属或选自相同金属的至少两种金属的合金形成。 连接安装基板和半导体芯片的工艺包括至少在其最外层由熔融层形成的接合层，将熔体层的温度维持在高于熔融层的熔点，然后形成 合金层通过液相扩散具有比熔体层更高的熔点。