公开(公告)号：US5355023A

公开(公告)日：1994-10-11

申请号：US68185

申请日：1993-05-28

申请人： Yugo Tomioka ,  Yukihiro Okeda ,  Yasuo Sato

发明人： Yugo Tomioka ,  Yukihiro Okeda ,  Yasuo Sato

IPC分类号： H01L23/522 ,  H01L27/11 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/5226 ,  H01L27/1112 ,  H01L2924/0002

摘要： A part of a polycrystalline silicon film forming a grounding line in a memory cell of a high-resistance load type SRAM, located immediately below a contact hole for connection between a polysilicon power supply line part and an aluminum power supply line part, is separated and isolated from the remaining part of the polycrystalline silicon film to form an island-like part. The contact hole extends through an interlayer insulating film below the aluminum power supply line part, the polysilicon power supply line part and another interlayer insulating film above the island part, and reaches the island part, whereby the aluminum power supply line part contacts even the island part through the contact hole. The island part also contacts the polysilicon power supply line part through another contact hole, whereby low-resistance contact can be obtained between the aluminum and polysilicon power supply line parts through the island part. Since the contact hole can be provided at a position above a grounding line, the area of the cell can be reduced. In this case, even when the contact hole reaches the polycrystalline silicon film of the grounding line due to difficulties in its etching control, undesirable short-circuiting can be avoided between the grounding and power supply lines.

摘要翻译： 在位于多晶硅电源线部分和铝电源线部分之间的用于连接的接触孔正下方的高电阻负载型SRAM的存储单元中形成接地线的一部分多晶硅膜被分离， 从多晶硅膜的剩余部分分离形成岛状部分。 接触孔延伸穿过铝电源线部分之下的层间绝缘膜，多晶硅供电线部分和岛部分上方的另一层间绝缘膜，并到达岛部，由此铝电源线部分甚至接触岛 部分通过接触孔。 岛部还通过另一个接触孔与多晶硅供电线部分接触，从而通过岛部分在铝和多晶硅供电线部分之间可以获得低电阻接触。 由于接触孔可以设置在接地线上方的位置，所以可以减小电池的面积。 在这种情况下，即使接触孔由于其蚀刻控制困难而到达接地线的多晶硅膜，也可以避免接地和供电线之间的不期望的短路。