POROUS SILICON MATERIAL
    1.
    发明申请
    POROUS SILICON MATERIAL 审中-公开
    多孔硅材料

    公开(公告)号:US20130292839A1

    公开(公告)日:2013-11-07

    申请号:US13990889

    申请日:2011-11-07

    IPC分类号: H01L21/768 H01L23/498

    摘要: Provided are a method for producing a porous silicon material filled with a metal, the method including the steps of rendering hydrophobic a porous silicon substrate having pores from 1 to 5 nm in diameter, and depositing a metal into the pores of the porous silicon substrate by the electrodeposition of the porous silicon substrate; a method for producing a metallic nanoparticle or a nanofiber, the method including the steps of producing a porous silicon material filled with a metal, dissolving the silicon contained in the porous silicon material filled with a metal; a metallic nanoparticle or a nanofiber obtained by using the method for producing a metallic nanoparticle or a nanofiber: and a porous silicon material formed from a porous silicon substrate having pores from 1 to 5 nm in diameter and a resistivity of 5 to 20 Ω·cm, the pores of which are filled with a metal.

    摘要翻译: 提供一种填充有金属的多孔硅材料的制造方法,该方法包括以下步骤:使具有1至5nm直径的孔的多孔硅衬底疏水化,并通过以下步骤将金属沉积到多孔硅衬底的孔中: 多孔硅基板的电沉积; 一种制造金属纳米颗粒或纳米纤维的方法,所述方法包括以下步骤:制备填充有金属的多孔硅材料,将包含在填充有金属的多孔硅材料中的硅溶解; 通过使用金属纳米粒子或纳米纤维的制造方法得到的金属纳米粒子或纳米纤维,以及由孔径为1〜5nm,电阻率为5〜20Ω·cm的多孔硅基板形成的多孔硅材料 ,其孔被金属填充。