公开(公告)号：US4842654A

公开(公告)日：1989-06-27

申请号：US145403

申请日：1988-01-19

申请人： Yasuhiro Shindo ,  Yukio Tsujimoto ,  Isami Saito ,  Isamu Hiraoka ,  Hiroshi Hirayama

发明人： Yasuhiro Shindo ,  Yukio Tsujimoto ,  Isami Saito ,  Isamu Hiraoka ,  Hiroshi Hirayama

IPC分类号： C22F1/12 ,  B22F1/00 ,  C22F1/00 ,  H01C17/00 ,  H01C17/28 ,  H01L21/00 ,  H05K3/24 ,  H05K3/34

CPC分类号： B22F1/0048 ,  H01C17/006 ,  H01C17/281 ,  H01L21/67138 ,  H05K3/3494 ,  H05K2203/043 ,  H05K2203/0776 ,  H05K3/3473

摘要： Disclosed is a method of heat treatment of a low melting-point metal for production of spheroidal bodies formed of a low melting-point metal or alloy or heat treatment of the low-melting point metal coated on the surface of an electrode of a chip part. The method comprises the steps of placing a high boiling-point liquid, such as oil, into a tubular container disposed vertically and provided with a heater at an upper portion thereof, the high boiling-point liquid being provided with a temperature gradient ranging from a high temperature above the melting point of the metal to be subjected to heat treatment to a low temperature below the melting point thereof; and allowing the low melting-point metal or a low melting-point alloy per se or a material having the low melting-point metal or alloy on its surface to move from the high-temperature portion of the high boiling-point liquid; whereby the low melting-point metal or a low melting-point alloy per se or a material having the low melting-point metal or alloy on its surface is made to melt in the high-temperature portion and is cooled in the low-temperature portion, thereby allowing a melt or a molten portion to solidify.

公开(公告)号：US4829553A

公开(公告)日：1989-05-09

申请号：US145404

申请日：1988-01-19

申请人： Yasuhiro Shindo ,  Yukio Tsujimoto ,  Isami Saito

发明人： Yasuhiro Shindo ,  Yukio Tsujimoto ,  Isami Saito

IPC分类号： H01C1/144 ,  H01C17/00

CPC分类号： H01C17/006 ,  H01C1/144

摘要： The invention is directed to the electrode structure of a chip type component, such as a chip resistor, in which a plated film of low melting point metal is used as an outermost coating electrode film on the electrode portion, the layer underlying said plated film of low melting point metal on the electrode portion is formed of a metal material having a higher melting point than that of the plated film and also having good affinity with said plated film, and the electrode material comprising said plated film of low melting point metal is subjected to heat treatment at a temperature higher than the melting point thereof, so that the outermost surface of the electrode portion is coated with a remolten metal film.

摘要翻译： 本发明涉及一种芯片型元件的电极结构，例如芯片电阻器，其中使用低熔点金属的镀膜作为电极部分上的最外面的涂覆电极膜，所述电镀膜的下面的层 电极部分上的低熔点金属由熔点高于镀膜的金属材料形成，并且与所述镀膜具有良好的亲和性，并且包含所述低熔点金属镀膜的电极材料 在高于其熔点的温度下进行热处理，使得电极部分的最外表面涂覆有再熔融金属膜。