公开(公告)号：US08535445B2

公开(公告)日：2013-09-17

申请号：US12855739

申请日：2010-08-13

申请人： Boris Volf ,  Yuliy Rashkovsky

发明人： Boris Volf ,  Yuliy Rashkovsky

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01L21/68764 ,  C23C16/4586 ,  H01L21/68728 ,  H01L21/68771

摘要： A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.

摘要翻译： 用于晶片处理（例如化学气相沉积）中的晶片载体具有用于保持晶片和支撑表面的口袋，以支撑位于口袋的地板上方的晶片。 载体设有用于限制晶片的锁，以防止远离支撑表面的向上移动。 限制晶片对向上移动限制晶片失真对晶片和地板表面之间的间隔的影响，从而限制晶片失真对热传递的影响。 载体可以包括主要部分和具有比主要部分更高的热导率的次要部分，次要部分设置在口袋下方。

公开(公告)号：US20130276704A1

公开(公告)日：2013-10-24

申请号：US13450062

申请日：2012-04-18

申请人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

发明人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

IPC分类号： C23C16/458 ,  C23C16/46 ,  B23P17/00

CPC分类号： C23C16/4584 ,  Y10T29/49826

摘要： A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.

摘要翻译： 一种晶片载体，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统。 晶片载体包括凹入其体内的晶片保留孔。 每个口袋包括地板表面和围绕地板表面的周边壁表面并且限定该口袋的周边。 每个口袋具有沿对应的晶片载体径向轴线定位的中心。 在每个口袋中，一组保险杠主要定位在晶片保持袋的与中心轴线相对的远端部分处，以便在远端部分的周壁表面和边缘之间保持至少预定尺寸的间隙 的晶片被放置在晶片保持口袋中。

公开(公告)号：US20120040097A1

公开(公告)日：2012-02-16

申请号：US12855739

申请日：2010-08-13

申请人： Boris Volf ,  Yuliy Rashkovsky

发明人： Boris Volf ,  Yuliy Rashkovsky

IPC分类号： C23C16/458 ,  C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/4586 ,  H01L21/68728 ,  H01L21/68771

摘要： A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.

摘要翻译： 用于晶片处理（例如化学气相沉积）中的晶片载体具有用于保持晶片和支撑表面的口袋，以支撑位于口袋的地板上方的晶片。 载体设有用于限制晶片的锁，以防止远离支撑表面的向上移动。 限制晶片对向上移动限制晶片失真对晶片和地板表面之间的间隔的影响，从而限制晶片失真对热传递的影响。 载体可以包括主要部分和具有比主要部分更高的热导率的次要部分，次要部分设置在口袋下方。

公开(公告)号：US10316412B2

公开(公告)日：2019-06-11

申请号：US13450062

申请日：2012-04-18

申请人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

发明人： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

IPC分类号： C23C16/458 ,  H01L21/687

摘要： A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.

公开(公告)号：US20120171377A1

公开(公告)日：2012-07-05

申请号：US12981864

申请日：2010-12-30

申请人： Boris Volf ,  Guanghua Wei ,  Yuliy Rashkovsky

发明人： Boris Volf ,  Guanghua Wei ,  Yuliy Rashkovsky

IPC分类号： C23C16/46 ,  C23C16/458

CPC分类号： H01L21/68757 ,  H01L21/68771

摘要： A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier.

摘要翻译： 用于化学气相沉积设备的晶片载体包括在其外表面上的至少一个区域，其具有与外表面上的其它区域基本上不同的（例如，较低的）发射率。 修改的发射率区域可以位于载体的外边缘，顶表面和/或底表面上。 该区域可以与晶片载体的一个或多个晶片凹坑相关联。 修改的发射率区域可以被成形和定尺寸，以便改变通过该区域的热传递，从而增加晶片载体的顶表面的部分或跨单独晶片的温度均匀性。 修改的发射率区域可以由晶片载体的外表面上的涂层提供。