公开(公告)号：US5118378A

公开(公告)日：1992-06-02

申请号：US751677

申请日：1991-08-23

申请人： Tatsuo Moroi ,  Keiji Tada ,  Noriaki Yamamoto ,  Tetsunori Kaji ,  Gen Marumoto ,  Yuzou Ohhirabaru

发明人： Tatsuo Moroi ,  Keiji Tada ,  Noriaki Yamamoto ,  Tetsunori Kaji ,  Gen Marumoto ,  Yuzou Ohhirabaru

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32963

摘要： A method of detecting an end point of etching by emission spectroscopy. Using a constant ratio between emission intensities in the course of etching and after the termination thereof, a correction value is computed with data of a waveform already adjusted to be capable of detecting an end point of etching and the corresponding emission intensity in the course of etching treatment thereafter, and the waveform of corresponding emission intensity in the course of etching treatment is processed so that the detection can be conducted on the same level as in the end point detection already adjusted to be capable of detecting the end point of etching at the time of treatment. Thus, irrespective of the reduction of the quantity of emission for an emission detection at each time of treatment, a constant electric signal of the same detecting level can be obtained, making it possible to detect an end point of etching with the same accuracy as in the initial treatment.

摘要翻译： 通过发射光谱法检测蚀刻终点的方法。 在蚀刻过程中和在其终止之后使用发射强度之间的恒定比率，通过已经调节为能够检测蚀刻终点的蚀刻波形和蚀刻过程中的相应发射强度的数据来计算校正值 然后进行处理，并且处理在蚀刻处理过程中相应的发射强度的波形，使得可以在与已经调节为能够检测该刻蚀终点的终点检测相同的水平上进行检测 的治疗。 因此，不管每次处理时发射检测的发射量是否减少，都可以获得相同检测电平的恒定电信号，使得可以以与以下相同的精度来检测蚀刻终点 初步治疗。