公开(公告)号：US07718543B2

公开(公告)日：2010-05-18

申请号：US11608611

申请日：2006-12-08

申请人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

发明人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808

摘要： Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

摘要翻译： 在本发明中提供了从特征中去除BARC层的方法。 在一个实施例中，该方法包括在蚀刻室中提供具有填充有BARC层的特征的衬底，将包含NH 3气体的第一气体混合物供应到腔室中以蚀刻填充该特征的BARC层的第一部分， 将包含O 2气体的第二气体混合物引入到蚀刻室中以蚀刻设置在特征中的BARC层的剩余部分。

公开(公告)号：US20070249172A1

公开(公告)日：2007-10-25

申请号：US11410786

申请日：2006-04-25

申请人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

发明人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

IPC分类号： H01L21/465 ,  G06F19/00

CPC分类号： H01L21/76808 ,  H01L21/31138

摘要： Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

摘要翻译： 本文提供了从具有暴露的低k材料的基材中除去掩蔽材料同时最小化对低k材料的暴露表面的损害的方法。 在一个实施例中，用于从衬底去除掩模材料的方法包括提供具有暴露的低k材料和待除去的掩模材料的衬底; 将掩模材料暴露于由还原化学物质形成的第一等离子体第一时间段; 以及将所述掩蔽材料暴露于由氧化化学物质形成的第二等离子体第二时间段内。 这些步骤可以根据需要重复，并且可以以相反的顺序进行。 任选地，可以向氧化化学品中加入至少一种稀释气体。

公开(公告)号：US07790047B2

公开(公告)日：2010-09-07

申请号：US11410786

申请日：2006-04-25

申请人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

发明人： Zhilin Huang ,  Siyi Li ,  Qingjun Zhou

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/31138

摘要： Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

摘要翻译： 本文提供了从具有暴露的低k材料的基材中除去掩蔽材料同时最小化对低k材料的暴露表面的损害的方法。 在一个实施例中，用于从衬底去除掩模材料的方法包括提供具有暴露的低k材料和待除去的掩模材料的衬底; 将掩模材料暴露于由还原化学物质形成的第一等离子体第一时间段; 以及将所述掩蔽材料暴露于由氧化化学物质形成的第二等离子体第二时间段内。 这些步骤可以根据需要重复，并且可以以相反的顺序进行。 任选地，可以向氧化化学品中加入至少一种稀释气体。

公开(公告)号：US20080138997A1

公开(公告)日：2008-06-12

申请号：US11608611

申请日：2006-12-08

申请人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

发明人： Zhilin Huang ,  Siyi Li ,  Gerardo A. Delgadino

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808

摘要： Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.

摘要翻译： 在本发明中提供了从特征中去除BARC层的方法。 在一个实施例中，该方法包括提供在蚀刻室中具有填充有BARC层的特征的衬底，将包括NH 3气体的第一气体混合物供应到腔室中以蚀刻BARC的第一部分 并且将包含O 2 2气体的第二气体混合物供应到蚀刻室中以蚀刻设置在特征中的BARC层的剩余部分。